Multifunctional optoelectronic devices based on two-dimensional tellurium/MoS2 heterojunction

Two-dimensional van der Waals heterojunctions consisted of p–n-type semiconductors have been rapidly developed owing to their built-in electric field which can facilitate the separation of photogenerated electron–hole pairs and properties like current rectification and negative differential transconductance. Benefitting from these advantages, we have prepared an air-stable multifunctional p-tellurium (Te)/n-MoS2 heterostructure working both as a self-driven broadband photodetector and as an optically switchable complementary metal-oxide-semiconductor inverter. For photodetection, this device exhibits wavelength-modulated positive/negative optical response with large responsivity (1.51 A/W at 520 nm and 642.92 mA/W at 1550 nm, Vds = 0 V) and fast response speed, showcasing its prospects for optical encoding communication. Moreover, the device has been demonstrated to function as an inverter that will be shut down by illumination. Our multifunctional device possesses the compactness of integrated modules, widens the application scope of Te-based heterojunctions, and provides a reference for the application of Te-based devices in the field of integrated circuits.

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Publication Details

Journal
Applied Physics Letters
Published
2024-10-21
DOI
https://doi.org/10.1063/5.0238164
Citations
5
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.59

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article

Multifunctional optoelectronic devices based on two-dimensional tellurium/MoS2 heterojunction

Yu Zhao, Zhaoqiang Zheng, Shaoguang Zhao, Li Tao et al.
5 citations
Applied Physics Letters
2D Materials and Applications
0.59
article

Multifunctional optoelectronic devices based on two-dimensional tellurium/MoS2 heterojunction

Yu Zhao, Zhaoqiang Zheng, Shaoguang Zhao, Li Tao, Yue Cheng, Zhanxiong Qiu, Xiaoqi Zi, Qiman Zhang, Jingwen Zhao
article en
5 citations

Abstract

Two-dimensional van der Waals heterojunctions consisted of p–n-type semiconductors have been rapidly developed owing to their built-in electric field which can facilitate the separation of photogenerated electron–hole pairs and properties like current rectification and negative differential transconductance. Benefitting from these advantages, we have prepared an air-stable multifunctional p-tellurium (Te)/n-MoS2 heterostructure working both as a self-driven broadband photodetector and as an optically switchable complementary metal-oxide-semiconductor inverter. For photodetection, this device exhibits wavelength-modulated positive/negative optical response with large responsivity (1.51 A/W at 520 nm and 642.92 mA/W at 1550 nm, Vds = 0 V) and fast response speed, showcasing its prospects for optical encoding communication. Moreover, the device has been demonstrated to function as an inverter that will be shut down by illumination. Our multifunctional device possesses the compactness of integrated modules, widens the application scope of Te-based heterojunctions, and provides a reference for the application of Te-based devices in the field of integrated circuits.

Applied Physics LettersVol. 125(17)
Beijing Institute of Technology (CN), Guangdong University of Technology (CN)
National Natural Science Foundation of China, National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 33%
2D Materials and Applications
0.59
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Multifunctional optoelectronic devices based on two-dimensional tellurium/MoS2 heterojunction — Yu Zhao, Zhaoqiang Zheng, et al. · Applied Physics Letters (2024) | TGRS Research Map | TGRS