All-dry zinc-imidazolate resists for electron beam and EUV lithography
A high-resolution all-dry resist process is presented that utilizes amorphous zinc-imidazolate (aZnMIm) films deposited by atomic/molecular layer deposition (ALD/MLD), patterned with electron beam lithography (EBL), and developed with a low temperature gas phase etchant, hexafluoroacetylacetone (hfacH), to achieve well-resolved 16nm thick, 20nm pitch lines when using an organic-based underlayer. This work is a continuation of previous efforts that explored deposition, dry development, and pattern transfer. Previously, minimum feature sizes of 29nm thick lines with 40nm pitch were observed, but here, the use of an underlayer was able to shrink critical feature dimensions to 16nm.
Authors
- D. Howard Fairbrother (ORCID: https://orcid.org/0000-0003-4405-9728)
- Andrea Kraetz (ORCID: https://orcid.org/0000-0001-9903-0661)
- Paul Haghi‐Ashtiani
- Patrick M. Eckhert (ORCID: https://orcid.org/0000-0001-6520-1821)
- Mohammed K. Abdel‐Rahman (ORCID: https://orcid.org/0000-0002-8028-5258)
- Aaron Stein (ORCID: https://orcid.org/0000-0003-4424-5416)
- Mueed Ahmad (ORCID: https://orcid.org/0000-0002-6539-9062)
- J. Anibal Boscoboinik (ORCID: https://orcid.org/0000-0002-5090-7079)
- Michael Tsapatsis (ORCID: https://orcid.org/0000-0001-5610-3525)
- Peter Corkery (ORCID: https://orcid.org/0000-0003-3035-5868)
- Yurun Miao (ORCID: https://orcid.org/0000-0001-6429-8297)
- Yucheng Lan
- Kayley Waltz
- Dennis T. Lee (ORCID: https://orcid.org/0000-0002-1976-2852)
Institutions
- State University of New York (US)
- Johns Hopkins University (US)
- Brookhaven National Laboratory (US)
- Stony Brook University (US)
- Morgan State University (US)
Publication Details
- Published
- 2024-10-22
- DOI
- https://doi.org/10.1117/12.3050172
- Citations
- 2
- Primary Topic
- Advancements in Photolithography Techniques
- Type
- article
- Field-Weighted Citation Impact
- 0.42