Controllable Synthesis of WSe<sub>2</sub>–WS<sub>2</sub> Lateral Heterostructures via Atomic Substitution

The atomic substitution in two-dimensional (2D) materials is propitious to achieving compositionally engineered semiconductor heterostructures. However, elucidating the mechanism and developing methods to synthesize 2D heterostructures with atomic-scale precision are crucial. Here, we demonstrate the synthesis of monolayer WSe<sub>2</sub>-WS<sub>2</sub> heterostructures with a relatively sharp interface from monolayer WSe<sub>2</sub> using a chalcogen atom-exchange synthesis route at high temperatures for short periods. The substitution was initiated at the edges of monolayer WSe<sub>2</sub> and the lateral diffuse along the heterointerface, and the reaction can be controlled by the precise reaction time and temperature. The lateral heterostructure and substitution process are studied by Raman and photoluminescence (PL) spectroscopies, electron microscopy, and device characterization, revealing a possible mechanism of strain-induced transformation. Our findings demonstrate a highly controllable synthesis of 2D layered materials through atom substitutional chemistry and provide a simple route to control the atomic structure.

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Publication Details

Journal
ACS Nano
Published
2024-10-22
DOI
https://doi.org/10.1021/acsnano.4c06597
Citations
24
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
2.81

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article

Controllable Synthesis of WSe2–WS2 Lateral Heterostructures via Atomic Substitution

Xidong Duan, Yang Xiang-Dong, Xiaoming Zheng, Zhikang Ao et al.
24 citations
ACS Nano
2D Materials and Applications
2.81
article

Controllable Synthesis of WSe2–WS2 Lateral Heterostructures via Atomic Substitution

Xidong Duan, Yang Xiang-Dong, Xiaoming Zheng, Zhikang Ao, Shunhui Zhang, Mianzeng Zhong, Jia Li, Xiangzhe Zhang, Huifang Ma, Jun He, Hang Liu, Tian Zhang, Bo Li, Zhengwei Zhang, Lan Xiang, Fen Zhang, Baihui Zhang, Xuyang Zhang
article en
24 citations

Abstract

The atomic substitution in two-dimensional (2D) materials is propitious to achieving compositionally engineered semiconductor heterostructures. However, elucidating the mechanism and developing methods to synthesize 2D heterostructures with atomic-scale precision are crucial. Here, we demonstrate the synthesis of monolayer WSe<sub>2</sub>-WS<sub>2</sub> heterostructures with a relatively sharp interface from monolayer WSe<sub>2</sub> using a chalcogen atom-exchange synthesis route at high temperatures for short periods. The substitution was initiated at the edges of monolayer WSe<sub>2</sub> and the lateral diffuse along the heterointerface, and the reaction can be controlled by the precise reaction time and temperature. The lateral heterostructure and substitution process are studied by Raman and photoluminescence (PL) spectroscopies, electron microscopy, and device characterization, revealing a possible mechanism of strain-induced transformation. Our findings demonstrate a highly controllable synthesis of 2D layered materials through atom substitutional chemistry and provide a simple route to control the atomic structure.

ACS NanoVol. 18(44)
ON Semiconductor (United States) (US), Hunan University of Science and Technology (CN), Nanjing Tech University (CN), Central South University (CN), Ningbo University of Technology (CN), Hunan University (CN), National University of Defense Technology (CN), NeoPhotonics (United States) (US), The Synergetic Innovation Center for Advanced Materials (CN), Nanophoton (Brazil) (BR), Changsha University of Science and Technology (CN), King Abdullah University of Science and Technology (SA)
Natural Science Foundation of Hunan Province
Openalex Percentile: Top 6%
2D Materials and Applications
2.81
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