Investigations on Electro-Optical and Photoelectric Detection Performance of GaN-Based micro-LEDs by Removing p-AlGaN Electron-Blocking Layer
Polarization effects introduced by the electron-blocking layer (EBL) in InGaN-based micro light-emitting diodes (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula> LEDs) have a significant impact on their display and detection applications. Therefore, the impact and necessity of EBL structure for <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula> LED devices intended for such applications need to be reassessed. This article investigates the effect of removing p-AlGaN EBL structure on the performance of blue <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula> LEDs when used as light-emitting devices under low-current injection and photodetectors (PDs). Luminescence efficiency and color stability of the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula> LED without EBL improve under low-current injection due to weakened polarization-induced band-bending and enhanced hole injection and electron confinement, as numerical simulations show. For photodetection applications, removing EBL reduces the photogenerated carrier escape barrier, improving the responsivity and bandwidth of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula> LED PDs. Additionally, anomalous responsivities, dependent on bias and excitation energy, were observed in <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula> LED PDs with EBL. These observations can be elucidated by the trap-assisted tunneling (TAT) mechanism.
Authors
- Tingwei Lu (ORCID: https://orcid.org/0000-0003-4445-4648)
- Hao‐Chung Kuo (ORCID: https://orcid.org/0000-0002-9373-4649)
- Yijun Lü (ORCID: https://orcid.org/0000-0002-1247-6597)
- Tingzhu Wu (ORCID: https://orcid.org/0000-0001-9453-6823)
- Shouqiang Lai (ORCID: https://orcid.org/0000-0002-2563-9885)
- Zhong Chen (ORCID: https://orcid.org/0000-0002-1473-2224)
- Yurong Dai (ORCID: https://orcid.org/0009-0003-8867-6573)
- Dongkai Yang
- Y.C. Yang
Institutions
- National Yang Ming Chiao Tung University (TW)
- 175th Hospital of People's Liberation Army (CN)
- Xiamen University of Technology (CN)
Publication Details
- Journal
- IEEE Transactions on Electron Devices
- Published
- 2024-10-22
- DOI
- https://doi.org/10.1109/ted.2024.3478197
- Citations
- 2
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.62
Funders
- National Natural Science Foundation of China
- Fundamental Research Funds for the Central Universities