A 4-mW 2.2–6.9 GHz LNA in 16 nm FinFET Technology for Cryogenic Applications
This work presents the design and measurement of a low-power wide-band cryogenic low-noise amplifier (LNA) that operates at both room and cryogenic temperatures using 16 nm FinFET technology. The LNA is packaged and measured at both room and cryogenic temperatures. It features a compact multistage cascode topology and operates between 2.2 and 6.9 GHz, with a noise figure (NF) of 0.36 dB, a peak gain of 31.4 dB, and a total dc power consumption of 4 mW at 18 K temperature.
Authors
- Richard Al Hadi (ORCID: https://orcid.org/0000-0002-1598-524X)
- Hamdi Mani (ORCID: https://orcid.org/0000-0002-1357-4172)
- P.F. Marsh
- Mau-Chung Frank Chang (ORCID: https://orcid.org/0000-0002-2934-9359)
- Pragya R. Shrestha (ORCID: https://orcid.org/0000-0001-9499-7822)
- Runzhou Chen
- Hao-Yu Chien (ORCID: https://orcid.org/0000-0002-4157-0806)
- J. P. Campbell (ORCID: https://orcid.org/0000-0002-3406-1165)
- Christopher S. Chen (ORCID: https://orcid.org/0000-0003-2445-8449)
- Kosmas Galatsis
Institutions
- National Institute of Standards and Technology (US)
- University of California, Los Angeles (US)
- Carbon180 (US)
- CryoLife (United States) (US)
- École de Technologie Supérieure (CA)
Publication Details
- Journal
- IEEE Microwave and Wireless Technology Letters
- Published
- 2024-10-22
- DOI
- https://doi.org/10.1109/lmwt.2024.3477328
- Citations
- 6
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 1.25
Funders
- Army Research Office