Study on Oxygen Plasma-Based Copper Etching Process

A plasma-based, room-temperature copper etch process using the chlorine- or bromine-containing feed gas was reported. This simple process could potentially replace the chemical mechanical polishing method in preparing copper interconnects. However, the chlorine- and bromine-containing gases are corrosive and must be handled with expensive equipment following stringent safety procedures. In this paper, the oxygen plasma-based copper etch process is presented. The copper film was converted into a porous and polycrystalline copper oxide film which was subsequently dissolved in a dilute hydrochloric acid solution. The copper film was expanded when converted into an oxide film. The oxidation precursors, i.e., oxygen radicals and ions, were generated in the plasma phase and then transported through the oxide layer to the underneath copper film where the oxidation reaction proceeded. The oxide growth rate is affected by plasma parameters, such as pressure and power, and the kinetics of the oxidation reaction. This new oxygen plasma-based process is a simple solution for preparing copper interconnects for nano and microelectronic products.