Investigation of Mechanical Stresses in SiC/Porous-Si Heterostructure

This study presents an investigation into the properties of SiC/por-Si structures obtained by the method of coordinated substitution of atoms (MCSA). Experimentally, it was determined that during the formation of the SiC layer, the ordered mesoporous structure of the silicon substrate is significantly altered. The morphology and structure of the samples were characterized using scanning electron microscopy, and further characterization of the heterostructure was carried out via glancing angle X-ray diffraction. The mechanical stresses in the SiC/por-Si heterostructure were experimentally determined using both X-ray diffraction and Raman spectroscopy. Finite element modeling was also used to assess the mechanical stresses in the obtained SiC/por-Si structure with the aim of establishing a correlation between theoretical and experimental data.

Authors

Publication Details

Journal
ECS Journal of Solid State Science and Technology
Published
2024-10-22
DOI
https://doi.org/10.1149/2162-8777/ad89f8
Citations
5
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
Field-Weighted Citation Impact
1.04

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Investigation of Mechanical Stresses in SiC/Porous-Si Heterostructure

Robert P. Johnson, R.A. Redko, В. В. Кідалов, Dominik Duleba et al.
5 citations
ECS Journal of Solid State Science and Technology
Silicon Carbide Semiconductor Technologies
1.04
article

Investigation of Mechanical Stresses in SiC/Porous-Si Heterostructure

Robert P. Johnson, R.A. Redko, В. В. Кідалов, Dominik Duleba, А. С. Ревенко, O. Gudymenko, Marc Aßmann
article en
5 citations

Abstract

This study presents an investigation into the properties of SiC/por-Si structures obtained by the method of coordinated substitution of atoms (MCSA). Experimentally, it was determined that during the formation of the SiC layer, the ordered mesoporous structure of the silicon substrate is significantly altered. The morphology and structure of the samples were characterized using scanning electron microscopy, and further characterization of the heterostructure was carried out via glancing angle X-ray diffraction. The mechanical stresses in the SiC/por-Si heterostructure were experimentally determined using both X-ray diffraction and Raman spectroscopy. Finite element modeling was also used to assess the mechanical stresses in the obtained SiC/por-Si structure with the aim of establishing a correlation between theoretical and experimental data.

ECS Journal of Solid State Science and TechnologyVol. 13(11)
Irish Research Council for Science, Engineering and Technology, Science Foundation Ireland, Deutsche Forschungsgemeinschaft
Openalex Percentile: Top 23%
Silicon Carbide Semiconductor Technologies
1.04
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.