Investigation of Mechanical Stresses in SiC/Porous-Si Heterostructure
This study presents an investigation into the properties of SiC/por-Si structures obtained by the method of coordinated substitution of atoms (MCSA). Experimentally, it was determined that during the formation of the SiC layer, the ordered mesoporous structure of the silicon substrate is significantly altered. The morphology and structure of the samples were characterized using scanning electron microscopy, and further characterization of the heterostructure was carried out via glancing angle X-ray diffraction. The mechanical stresses in the SiC/por-Si heterostructure were experimentally determined using both X-ray diffraction and Raman spectroscopy. Finite element modeling was also used to assess the mechanical stresses in the obtained SiC/por-Si structure with the aim of establishing a correlation between theoretical and experimental data.
Authors
- Robert P. Johnson (ORCID: https://orcid.org/0000-0002-8046-2138)
- R.A. Redko (ORCID: https://orcid.org/0000-0001-9036-5852)
- В. В. Кідалов (ORCID: https://orcid.org/0000-0002-5128-1880)
- Dominik Duleba (ORCID: https://orcid.org/0000-0002-0618-2162)
- А. С. Ревенко (ORCID: https://orcid.org/0009-0009-4147-1179)
- O. Gudymenko (ORCID: https://orcid.org/0000-0002-5866-8084)
- Marc Aßmann (ORCID: https://orcid.org/0000-0003-4953-1286)
Publication Details
- Journal
- ECS Journal of Solid State Science and Technology
- Published
- 2024-10-22
- DOI
- https://doi.org/10.1149/2162-8777/ad89f8
- Citations
- 5
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 1.04
Funders
- Irish Research Council for Science, Engineering and Technology
- Science Foundation Ireland
- Deutsche Forschungsgemeinschaft