Reduction of the Threading Dislocation Density in GaSb Layers Grown on Si(001) by Molecular Beam Epitaxy

Abstract The monolithic integration of III‐V semiconductors on Si emerges as a promising approach for realizing photonic integrated circuits. However, the performance and reliability of epitaxially grown devices on Si are hampered by the threading dislocation density (TDD) generated during the growth. In this study, the efficiency of a structure, combining III‐Sb‐based insertion layers and thermal annealing is evaluated, on the reduction of the emerging TDD in GaSb buffer layers grown on Si(001) substrates by molecular beam epitaxy. the impact of the thickness, composition, and number of the insertion layers is extensively explored. Then a detailed study of the annealing cycles with different conditions is conducted. A record TDD in the low 10 7 cm −2 for a 2.25 µm GaSb buffer grown on Si(001) is ultimately demonstrated.