Strong Grain Boundary Passivation Effect of Coevaporated Dopants Enhances the Photoemission of Lead Halide Perovskites

Herein, we demonstrate that coevaporated dopants provide a means to passivate buried interfacial defects occurring at perovskite grain boundaries in evaporated perovskite thin films, thus giving rise to an enhanced photoluminescence. By means of an extensive photophysical characterization, we provide experimental evidence that indicate that the codopant acts mainly at the grain boundaries. They passivate interfacial traps and prevent the formation of photoinduced deep traps. On the other hand, the presence of an excessive amount of organic dopant can lead to a barrier for carrier diffusion. Hence, the passivation process demands a proper balance between the two effects. Our analysis on the role of the dopant, performed under different excitation regimes, permits evaluation of the performance of the material under conditions more adapted to photovoltaic or light emitting applications. In this context, the approach taken herein provides a screening method to evaluate the suitability of a passivating strategy prior to its incorporation into a device.

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Publication Details

Journal
ACS Applied Materials & Interfaces
Published
2024-10-22
DOI
https://doi.org/10.1021/acsami.4c13434
Citations
1
Primary Topic
Perovskite Materials and Applications
Type
article
Field-Weighted Citation Impact
0.21

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article

Strong Grain Boundary Passivation Effect of Coevaporated Dopants Enhances the Photoemission of Lead Halide Perovskites

David O. Tiede, Hernán Míguez, Cristina Roldán‐Carmona, Henk J. Bolink et al.
1 citations
ACS Applied Materials & Interfaces
Perovskite Materials and Applications
0.21
article

Strong Grain Boundary Passivation Effect of Coevaporated Dopants Enhances the Photoemission of Lead Halide Perovskites

David O. Tiede, Hernán Míguez, Cristina Roldán‐Carmona, Henk J. Bolink, Juan F. Galisteo‐López, Manuel Piot, Michele Forzatti, Isabella Antony Kalluvila Justin
article en
1 citations

Abstract

Herein, we demonstrate that coevaporated dopants provide a means to passivate buried interfacial defects occurring at perovskite grain boundaries in evaporated perovskite thin films, thus giving rise to an enhanced photoluminescence. By means of an extensive photophysical characterization, we provide experimental evidence that indicate that the codopant acts mainly at the grain boundaries. They passivate interfacial traps and prevent the formation of photoinduced deep traps. On the other hand, the presence of an excessive amount of organic dopant can lead to a barrier for carrier diffusion. Hence, the passivation process demands a proper balance between the two effects. Our analysis on the role of the dopant, performed under different excitation regimes, permits evaluation of the performance of the material under conditions more adapted to photovoltaic or light emitting applications. In this context, the approach taken herein provides a screening method to evaluate the suitability of a passivating strategy prior to its incorporation into a device.

ACS Applied Materials & InterfacesVol. 16(44)
Consejo Superior de Investigaciones Científicas (ES), Universitat de València (ES), Parc Científic de la Universitat de València (ES), Universidad de Sevilla (ES)
European Commission, Ministerio de Ciencia, Tecnología e Innovación Productiva, Generalitat Valenciana, Junta de Andalucía, European Research Council, European Regional Development Fund, Agencia Estatal de Investigación, H2020 Marie Skłodowska-Curie Actions
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Perovskite Materials and Applications
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