Aging impact of the 4H-SiC MOSFET SiO$_2$ gate dielectric

Authors

Tanguy Phulpin (ORCID: https://orcid.org/0000-0003-4392-4548)
Pascal Chrétien (ORCID: https://orcid.org/0009-0005-5177-1360)
Alexandre Jaffré

Institutions

Laboratoire de Génie Électrique et Électronique de Paris (FR)

Publication Details

Journal: SPIRE - Sciences Po Institutional REpository
Published: 2024-09-23
Primary Topic: Silicon Carbide Semiconductor Technologies
Type: article
Field-Weighted Citation Impact: 0.00

Controls

|||

ALL TIME

JAN

FEB

MAR

APR

MAY

JUN

JUL

AUG

SEP

OCT

article

Aging impact of the 4H-SiC MOSFET SiO$_2$ gate dielectric

Tanguy Phulpin, Pascal Chrétien, Alexandre Jaffré

Sep 23, 2024

SPIRE - Sciences Po Institutional REpository

Silicon Carbide Semiconductor Technologies

article

Aging impact of the 4H-SiC MOSFET SiO$_2$ gate dielectric

Tanguy Phulpin, Pascal Chrétien, Alexandre Jaffré

September 23, 2024article en

Abstract

No abstract available for this paper.

SPIRE - Sciences Po Institutional REpository

Laboratoire de Génie Électrique et Électronique de Paris (FR)

Affordable and clean energy

Openalex Percentile: Top 84%

Silicon Carbide Semiconductor Technologies

Open Access PDF OpenAlex

AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.

Aging impact of the 4H-SiC MOSFET SiO$_2$ gate dielectric — Tanguy Phulpin, Pascal Chrétien, et al. · SPIRE - Sciences Po Institutional REpository (2024) | TGRS Research Map | TGRS