Colossal Dielectric Constant of Nanocrystalline/Amorphous Homo-Composite BaTiO3 Films Deposited via Pulsed Laser Deposition Technique

We report the pulsed laser deposition (PLD) of nanocrystalline/amorphous homo-composite BaTiO<sub>3</sub> (BTO) films exhibiting an unprecedented combination of a colossal dielectric constant (<i>ε</i><sub>r</sub>) and extremely low dielectric loss (tan <i>δ</i>). By varying the substrate deposition temperature (<i>T</i><sub>d</sub>) over a wide range (300-800 °C), we identified <i>T</i><sub>d</sub> = 550 °C as the optimal temperature for growing BTO films with an <i>ε</i><sub>r</sub> as high as ~3060 and a tan <i>δ</i> as low as 0.04 (at 20 kHz). High-resolution transmission electron microscopy revealed that the PLD-BTO films consist of BTO nanocrystals (~20-30 nm size) embedded within an otherwise amorphous BTO matrix. The impressive dielectric behavior is attributed to the combination of highly crystallized small BTO nanograins, which amplify interfacial polarization, and the surrounding amorphous matrix, which effectively isolates the nanograins from charge carrier transport. Our findings could facilitate the development of next-generation integrated dielectric devices.

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Publication Details

Journal
Nanomaterials
Published
2024-10-18
DOI
https://doi.org/10.3390/nano14201677
Citations
3
Primary Topic
Dielectric properties of ceramics
Type
article
Field-Weighted Citation Impact
0.35

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article

Colossal Dielectric Constant of Nanocrystalline/Amorphous Homo-Composite BaTiO3 Films Deposited via Pulsed Laser Deposition Technique

Akira Kishimoto, Joël Leblanc-Lavoie, Shinya Kondo, Takashi Teranishi et al.
3 citations
Nanomaterials
Dielectric properties of ceramics
0.35
article

Colossal Dielectric Constant of Nanocrystalline/Amorphous Homo-Composite BaTiO3 Films Deposited via Pulsed Laser Deposition Technique

Akira Kishimoto, Joël Leblanc-Lavoie, Shinya Kondo, Takashi Teranishi, My Alı El Khakani, Loick Pichon, Taichi Murakami
article en
3 citations

Abstract

We report the pulsed laser deposition (PLD) of nanocrystalline/amorphous homo-composite BaTiO<sub>3</sub> (BTO) films exhibiting an unprecedented combination of a colossal dielectric constant (<i>ε</i><sub>r</sub>) and extremely low dielectric loss (tan <i>δ</i>). By varying the substrate deposition temperature (<i>T</i><sub>d</sub>) over a wide range (300-800 °C), we identified <i>T</i><sub>d</sub> = 550 °C as the optimal temperature for growing BTO films with an <i>ε</i><sub>r</sub> as high as ~3060 and a tan <i>δ</i> as low as 0.04 (at 20 kHz). High-resolution transmission electron microscopy revealed that the PLD-BTO films consist of BTO nanocrystals (~20-30 nm size) embedded within an otherwise amorphous BTO matrix. The impressive dielectric behavior is attributed to the combination of highly crystallized small BTO nanograins, which amplify interfacial polarization, and the surrounding amorphous matrix, which effectively isolates the nanograins from charge carrier transport. Our findings could facilitate the development of next-generation integrated dielectric devices.

NanomaterialsVol. 14(20)
Tokyo Institute of Technology (JP), Okayama University (JP), Institut National de la Recherche Scientifique (CA)
Mazda Foundation, Okayama Foundation for Science and Technology, Natural Sciences and Engineering Research Council of Canada, Japan Society for the Promotion of Science
Openalex Percentile: Top 44%
Dielectric properties of ceramics
0.35
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