Memristor structures shape effect: nanoscale resistive switching of dot and lateral electrochemical titanium oxide
The paper presents the results of the formation of lateral $(2000 \times 2000 \mathrm{~nm})$ and dot $(50 \mathrm{~nm})$ nanostructures of electrochemical titanium oxide, as well as the results of studying their resistive switching. It was shown that the resulting structures exhibit a resistive switching effect. An endurance test was carried out for 100 switching cycles and a retention test for 450 seconds.
Authors
- А. А. Федотов (ORCID: https://orcid.org/0000-0002-6022-6314)
- Chander Prakash (ORCID: https://orcid.org/0000-0003-0856-9712)
- V. A. Smirnov (ORCID: https://orcid.org/0000-0001-7130-2194)
- V I Avilov (ORCID: https://orcid.org/0000-0002-2425-3980)
- Victor Kazantsev (ORCID: https://orcid.org/0000-0002-2881-6648)
- Nikita V. Polupanov
Institutions
- Southern Federal University (RU)
Publication Details
- Published
- 2024-09-19
- DOI
- https://doi.org/10.1109/dcna63495.2024.10718530
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Russian Science Foundation