Synthesis and size effect on resistive switching in ZnO:Ga thin films for neuromorphic applications

The paper shows the results of investigation of the influence of synthesis modes of ZnO:Ga thin films by pulsed laser deposition on their morphological and electrophysical characteristics. Experimental studies of the influence of dimensional effects on the resistive switching parameters of memristor structures based on doped ZnO thin films have been carried out. The relationship between the morphological parameters of the films, their thickness and resistive switching characteristics has been established. The results showing how the thickness, surface roughness and average grain diameter influence the ratio of resistances in the high-resistance and low-resistance states, as well as the switching voltage $\mathbf{U}_{\text {set }}$ and $\mathbf{U}_{\text {res }}$ have been obtained.