Synaptic plasticity in the nanocrystalline ZnO cross-point for neuromorphic systems of AI
The work shows the results of multilevel resistive switching, as well as synaptic plasticity of neuron-like memristive cross-point based on nanocrystalline zinc oxide films. It has been shown that when the amplitude and duration of the input pulse are varied, the crosspoint exhibits 6 resistive states and switching energy in a few pJ. Also, the cross-point exhibit paired-pulse facilitation and depression at pulse interval from 1 ms to 10 ms and from 50 ms to 100 ms, respectively. The obtained results can be used for hardware implementation of neural networks, neuromorphic structures of robotic complexes, prostheses, and artificial intelligence systems.
Authors
- Daniel Rodrı́guez (ORCID: https://orcid.org/0000-0002-4699-0957)
- Chander Prakash (ORCID: https://orcid.org/0000-0003-0856-9712)
- V. A. Smirnov (ORCID: https://orcid.org/0000-0001-7130-2194)
- Victor Kazantsev (ORCID: https://orcid.org/0000-0002-2881-6648)
- Zakhar Vakulov (ORCID: https://orcid.org/0000-0003-3084-4522)
- R V Tominov (ORCID: https://orcid.org/0000-0002-1263-2158)
Institutions
- Lovely Professional University (IN)
- Southern Federal University (RU)
Publication Details
- Published
- 2024-09-19
- DOI
- https://doi.org/10.1109/dcna63495.2024.10718418
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Russian Science Foundation
- Southern Federal University