Threshold Switching and Resistive Switching in SnO2-HfO2 Laminated Ultrathin Films
Polycrystalline SnO2-HfO2 nanolaminated thin films were grown by atomic layer deposition (ALD) on SiO2/Si(100) and TiN substrates at 300 °C. The samples, when evaluated electrically, exhibited bipolar resistive switching. The sample object with a stacked oxide layer structure of SnO2 | HfO2 | SnO2 | HfO2 additionally exhibited bidirectional threshold resistive switching properties. The sample with an oxide layer structure of HfO2 | SnO2 | HfO2 displayed bipolar resistive switching with a ratio of high and low resistance states of three orders of magnitude. Endurance tests revealed distinguishable differences between low and high resistance states after 2500 switching cycles.
Authors
- Joonas Merisalu (ORCID: https://orcid.org/0000-0001-6498-4588)
- Peeter Ritslaid (ORCID: https://orcid.org/0000-0002-3603-2237)
- Kaupo Kukli (ORCID: https://orcid.org/0000-0002-5821-0364)
- Markus Otsus (ORCID: https://orcid.org/0000-0002-1223-0255)
- Kristjan Kalam (ORCID: https://orcid.org/0000-0001-5934-1860)
- M.P. Sham Aan
Institutions
- University of Tartu (EE)
Publication Details
- Journal
- Crystals
- Published
- 2024-10-19
- DOI
- https://doi.org/10.3390/cryst14100909
- Citations
- 2
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.42
Funders
- European Regional Development Fund