The electronic and magnetic properties of Cr-doped ZnO monolayer at higher percentage by first principles calculations

The crystal structure, structural stability , electronic band structures and magnetization of Cr-doped ZnO monolayer (ML) have been investigated by GGA+U method using first principles calculations in this work. The stability of these systems is confirmed by the negative formation energies at different Cr concentrations. The calculated band gaps with and without the Hubbard U correction aligned well with other computational results. With the increase of Cr concentration, the band gap of Cr-doped ZnO monolayer decreases for the spin-up configuration. However, in the spin-down configuration, the band gap increases first and then decreases and the maximum band gap is obtained at 22.22% Cr concentrations. At 33.33% Cr concentration, the ZnO ML exhibits metallic behavior. The density of states (DOS) analysis reveals an asymmetric nature, indicating ferromagnetism in Cr-doped ZnO MLs at various concentrations, with a magnetic moment per Cr atom of approximately 3.99 μ B . The total magnetic moment rises with increasing Cr concentration. Charge density difference analysis shows increased magnetization with higher Cr concentration. At 22.22% Cr concentration, the ZnO ML exhibits ferromagnetism and semiconducting properties, suggesting significant potential for spintronic applications as a diluted magnetic semiconductor .