A. Trampert (ORCID: https://orcid.org/0000-0001-7949-643X)
E. Tournié (ORCID: https://orcid.org/0000-0002-8177-0810)
Michel Ramonda
Karl Graser
Institutions
Institut Universitaire de France (FR)
Centre des Matériaux (FR)
Paul Drude Institute for Solid State Electronics (DE)
Institut d'Électronique et des Systèmes (FR)
Publication Details
Journal
SPIRE - Sciences Po Institutional REpository
Published
2024-09-08
Primary Topic
Semiconductor Quantum Structures and Devices
Type
article
Field-Weighted Citation Impact
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article
Reduction of threading dislocation density in GaSb layers grown on Si(001) by molecular beam epitaxy: misfit dislocation networks
Jean‐Baptiste Rodriguez, Audrey Gilbert, A. Trampert, E. Tournié et al.
Journal
SPIRE - Sciences Po Institutional REpository
Topics
Semiconductor Quantum Structures and Devices
article
Reduction of threading dislocation density in GaSb layers grown on Si(001) by molecular beam epitaxy: misfit dislocation networks
Jean‐Baptiste Rodriguez, Audrey Gilbert, A. Trampert, E. Tournié, Michel Ramonda, Karl Graser
article en
Abstract
No abstract available for this paper.
Publication Tag
SPIRE - Sciences Po Institutional REpository
Institutions
Institut Universitaire de France (FR), Centre des Matériaux (FR), Paul Drude Institute for Solid State Electronics (DE), Institut d'Électronique et des Systèmes (FR)