Inducing controlled blistering by Smart-CutTM process in semiconducting diamond: A STEM study

• Hot-implantation has been used for a diamond smart-cut process. • Blistering window has been identified. • EELS and HR-STEM evaluates diamond’s lattice after the implantation process. • The formation of graphite nano-layers has been evidenced, and are related to the exfoliation direction. An alternative route for the development of diamond-based technologies is the Smart-Cut process. Such a process could make possible the combination of diamond and silicon technologies, as well as building alternative structures or manufacturing large diamond wafers. As this process involves H + implantation, crystalline quality and implantation-related damages may alter the electronic properties of the diamond wafer. So, the identification of a window of parameters that allows to induce controlled blistering is a critical bottleneck towards a reliable diamond/Smart-Cut based technology. In this contribution, we present STEM-based experiments that were used to evaluate the goodness of a new approach for the Smart-Cut process. Indeed, a window of parameters where graphite nano-layers are formed on the implanted region is identified.