Molecular Reconfiguration of Disordered Tellurium Oxide Transistors with Biomimetic Spectral Selectivity

Reconfigurable devices with field-effect transistor features and neuromorphic behaviors are promising for enhancing data processing capability and reducing power consumption in next-generation semiconductor platforms. However, commonly used 2D materials for reconfigurable devices require additional modulation terminals and suffer from complex and stringent operating rules to obtain specific functionalities. Here, a p-type disordered tellurium oxide is introduced that realizes dual-mode reconfigurability as a logic transistor and a neuromorphic device. Due to the disordered film surface, the enhanced adsorption of oxygen molecules and laser-induced desorption concurrently regulate the carrier concentration in the channel. The device exhibits high-performance p-type characteristics with a field-effect hole mobility of 10.02 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> and an I<sub>on</sub>/I<sub>off</sub> ratio exceeding 10<sup>6</sup> in the transistor mode. As a neuromorphic device, the vision system exhibits biomimetic bee vision, explicitly responding to the blue-to-ultraviolet light. Finally, in-sensor denoising and invisible image recognition in static and dynamic scenarios are achieved.

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Publication Details

Journal
Advanced Materials
Published
2024-10-17
DOI
https://doi.org/10.1002/adma.202412210
Citations
16
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
3.34
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article

Molecular Reconfiguration of Disordered Tellurium Oxide Transistors with Biomimetic Spectral Selectivity

You Meng, Johnny Chung Yin Ho, Yezhan Li, Yi Shen et al.
16 citations
Advanced Materials
Advanced Memory and Neural Computing
3.34
article

Molecular Reconfiguration of Disordered Tellurium Oxide Transistors with Biomimetic Spectral Selectivity

You Meng, Johnny Chung Yin Ho, Yezhan Li, Yi Shen, Chengchao Jin, Dengji Li, Pengshan Xie, Quan Quan, Boxiang Gao, Zenghui Wu, Jia Sun, Yuxuan Zhang, Bowen Li, Weijun Wang, Jingwen Wang, SenPo Yip, He Shao
article en
16 citations

Abstract

Reconfigurable devices with field-effect transistor features and neuromorphic behaviors are promising for enhancing data processing capability and reducing power consumption in next-generation semiconductor platforms. However, commonly used 2D materials for reconfigurable devices require additional modulation terminals and suffer from complex and stringent operating rules to obtain specific functionalities. Here, a p-type disordered tellurium oxide is introduced that realizes dual-mode reconfigurability as a logic transistor and a neuromorphic device. Due to the disordered film surface, the enhanced adsorption of oxygen molecules and laser-induced desorption concurrently regulate the carrier concentration in the channel. The device exhibits high-performance p-type characteristics with a field-effect hole mobility of 10.02 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> and an I<sub>on</sub>/I<sub>off</sub> ratio exceeding 10<sup>6</sup> in the transistor mode. As a neuromorphic device, the vision system exhibits biomimetic bee vision, explicitly responding to the blue-to-ultraviolet light. Finally, in-sensor denoising and invisible image recognition in static and dynamic scenarios are achieved.

Advanced MaterialsVol. 36(49)
Kyushu University (JP), Central South University (CN), City University of Hong Kong (HK), State Key Laboratory of Transducer Technology (CN), Shanghai Institute of Microsystem and Information Technology (CN)
Affordable and clean energy
Openalex Percentile: Top 7%
Advanced Memory and Neural Computing
3.34
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