Optoelectronic, thermoelectric, and elastic properties of Cu<sub>6</sub>PSe<sub>5</sub>X (X = Br, I) argyrodites using density functional theory

Abstract Cu 6 PSe 5 X (X = Br, I) argyrodites’ structural, optoelectronic, elastic, anisotropic, and thermal properties are examined using the method of ab initio through the density functional theory. There is a significant match found between the calculated ground state structural characteristics and the available data. Based on the Birch-Murnaghan fit curve for optimization, it is found that both compounds achieve ground state. The energy bandgap of Cu 6 PSe 5 Br is 0.606 eV (indirect), while Cu 6 PSe 5 I has a band gap of 0.697 eV (direct) according to the mBJ-functional. They appear to be promising prospects for high frequency applications since the UV area contains the most notable absorption peak. The BoltzTrap package, which is incorporated into WIEN2K, has been used to determine the thermoelectric properties. Cu 6 PSe 5 Br thermal conductivity reaches a maximum of 4.6 × 10 14 ( W/mKs ) when the temperature rises to 1000 K, whereas Cu 6 PSe 5 I has a maximum value of 5.24 × 10 14 ( W/mKs ). At room temperature, the ZT values for Cu 6 PSe 5 Br and Cu 6 PSe 5 I are 0.803 and 0.972, respectively. The elastic constants show that the materials are mechanically stable. The estimated Poisson ratio, which ranges from 0.264 for the Br-based to 0.252 for the I-based, indicates that bonding has a significant ionic character. Compared to Cu 6 PSe 5 I, Cu 6 PSe 5 Br has a greater melting temperature. Since these materials have appropriate energy bandgaps, they can be used in several optoelectronic devices.

Authors

Institutions

Publication Details

Journal
Physica Scripta
Published
2024-10-18
DOI
https://doi.org/10.1088/1402-4896/ad886f
Citations
3
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
0.63
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Optoelectronic, thermoelectric, and elastic properties of Cu6PSe5X (X = Br, I) argyrodites using density functional theory

Tahir Zaman, Muhammad Haneef, G. Murtaza, Aijaz Rasool Chaudhry et al.
3 citations
Physica Scripta
Chalcogenide Semiconductor Thin Films
0.63
article

Optoelectronic, thermoelectric, and elastic properties of Cu6PSe5X (X = Br, I) argyrodites using density functional theory

Tahir Zaman, Muhammad Haneef, G. Murtaza, Aijaz Rasool Chaudhry, Muhammad Saeed, Mohib Ullah, Muhammad Awais Jehangir, Muhammad Ibrar
article en
3 citations

Abstract

Abstract Cu 6 PSe 5 X (X = Br, I) argyrodites’ structural, optoelectronic, elastic, anisotropic, and thermal properties are examined using the method of ab initio through the density functional theory. There is a significant match found between the calculated ground state structural characteristics and the available data. Based on the Birch-Murnaghan fit curve for optimization, it is found that both compounds achieve ground state. The energy bandgap of Cu 6 PSe 5 Br is 0.606 eV (indirect), while Cu 6 PSe 5 I has a band gap of 0.697 eV (direct) according to the mBJ-functional. They appear to be promising prospects for high frequency applications since the UV area contains the most notable absorption peak. The BoltzTrap package, which is incorporated into WIEN2K, has been used to determine the thermoelectric properties. Cu 6 PSe 5 Br thermal conductivity reaches a maximum of 4.6 × 10 14 ( W/mKs ) when the temperature rises to 1000 K, whereas Cu 6 PSe 5 I has a maximum value of 5.24 × 10 14 ( W/mKs ). At room temperature, the ZT values for Cu 6 PSe 5 Br and Cu 6 PSe 5 I are 0.803 and 0.972, respectively. The elastic constants show that the materials are mechanically stable. The estimated Poisson ratio, which ranges from 0.264 for the Br-based to 0.252 for the I-based, indicates that bonding has a significant ionic character. Compared to Cu 6 PSe 5 I, Cu 6 PSe 5 Br has a greater melting temperature. Since these materials have appropriate energy bandgaps, they can be used in several optoelectronic devices.

Physica ScriptaVol. 99(11)
University of Electronic Science and Technology of China (CN), Islamia College University (PK), Hazara University (PK), Huzhou Normal University (CN), University of Bisha (SA)
Openalex Percentile: Top 31%
Chalcogenide Semiconductor Thin Films
0.63
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.