A CMOS Optoelectronic Transimpedance Amplifier Using Concurrent Automatic Gain Control for LiDAR Sensors

This paper presents a novel optoelectronic transimpedance amplifier (OTA) for short-range LiDAR sensors used in 180 nm CMOS technology, which consists of a main transimpedance amplifier (m-TIA) with an on-chip P+/N-well/Deep N-well avalanche photodiode (P+/NW/DNW APD) and a replica TIA with another on-chip APD, not only to acquire circuit symmetry but to also obtain concurrent automatic gain control (AGC) function within a narrow single pulse-width duration. In particular, for concurrent AGC operations, 3-bit PMOS switches with series resistors are added in parallel with the passive feedback resistor in the m-TIA. Then, the PMOS switches can be turned on or off in accordance with the DC output voltage amplitudes of the replica TIA. The post-layout simulations reveal that the OTA extends the dynamic range up to 74.8 dB (i.e., 1 µApp~5.5 mApp) and achieves a 67 dBΩ transimpedance gain, an 830 MHz bandwidth, a 16 pA/√Hz noise current spectral density, a −31 dBm optical sensitivity for a 10−12 bit error rate, and a 6 mW power dissipation from a single 1.8 V supply. The chip occupies a core area of 200 × 120 µm2.

Authors

Institutions

Publication Details

Journal
Photonics
Published
2024-10-17
DOI
https://doi.org/10.3390/photonics11100974
Citations
1
Primary Topic
Advanced Optical Sensing Technologies
Type
article
Field-Weighted Citation Impact
0.51

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

A CMOS Optoelectronic Transimpedance Amplifier Using Concurrent Automatic Gain Control for LiDAR Sensors

Yeojin Chon, Sung‐Min Park, S.-J. Choi
1 citations
Photonics
Advanced Optical Sensing Technologies
0.51
article

A CMOS Optoelectronic Transimpedance Amplifier Using Concurrent Automatic Gain Control for LiDAR Sensors

Yeojin Chon, Sung‐Min Park, S.-J. Choi
article en
1 citations

Abstract

This paper presents a novel optoelectronic transimpedance amplifier (OTA) for short-range LiDAR sensors used in 180 nm CMOS technology, which consists of a main transimpedance amplifier (m-TIA) with an on-chip P+/N-well/Deep N-well avalanche photodiode (P+/NW/DNW APD) and a replica TIA with another on-chip APD, not only to acquire circuit symmetry but to also obtain concurrent automatic gain control (AGC) function within a narrow single pulse-width duration. In particular, for concurrent AGC operations, 3-bit PMOS switches with series resistors are added in parallel with the passive feedback resistor in the m-TIA. Then, the PMOS switches can be turned on or off in accordance with the DC output voltage amplitudes of the replica TIA. The post-layout simulations reveal that the OTA extends the dynamic range up to 74.8 dB (i.e., 1 µApp~5.5 mApp) and achieves a 67 dBΩ transimpedance gain, an 830 MHz bandwidth, a 16 pA/√Hz noise current spectral density, a −31 dBm optical sensitivity for a 10−12 bit error rate, and a 6 mW power dissipation from a single 1.8 V supply. The chip occupies a core area of 200 × 120 µm2.

PhotonicsVol. 11(10)
Ewha Womans University (KR)
National Research Foundation, IC Design Education Center, Iran Telecommunication Research Center, Ministry of Science and ICT, South Korea, Institute for Information and Communications Technology Promotion
Affordable and clean energy
Openalex Percentile: Top 25%
Advanced Optical Sensing Technologies
0.51
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.