Circuit Design Method for Reducing Static Current Consumption and Integrated Circuit Die Self-Heating in High-Temperature Transimpedance and Operational Amplifiers Based on Field-Effect Transistors

The circuit design method has been developed for halving the static current consumption of differential stages on field-effect transistors in transimpedance and operational amplifiers, which is recommended for use in micro-power analog microcircuits. An elementary thermal model of a high-temperature integrated circuit based on silicon-carbide (SiC), gallium-arsenide (GaAs) and silicon (Si) technologies under conditions of exposure to elevated temperatures is considered for the case when the integrated circuit die (chip) releases its self-power P<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</inf>. The permissible values of the self-heating power P<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</inf> have been determined for SiC, GaAs and Si technological processes that ensure the operation of the integrated circuit die at a temperature not higher than a given limit value.