Silicon Crystallization on a Flexible Substrate Using Refractory Metals

This paper presents the results of the study of silicon crystallization on flexible polyimide substrates. Crystallization was carried out by the method of metal-induced laser-stimulated crystallization. A feature of this work is the use of refractory metals such as molybdenum and tungsten as an absorbing layer. An infrared pulsed laser is used for crystallization. To determine the quality of crystallization, the structure of silicon was studied by Raman scattering.