Thermal Model of Silicon-Carbide and Gallium-Nitride High-Temperature Integrated Circuits

Thermal models of high-temperature integrated circuits (ICs) on wide-gap semiconductors (silicon-carbide and gallium-nitride) are considered. The “chip-to-environment” thermal-resistance is calculated for one of the ICs designs. The chip overheating temperatures of silicon-carbide (SiC) and gallium-nitride (GaN) ICs were determined taking into account the dependence of the thermal conductivity coefficients of SiC and GaN on temperature. For two self-heating power levels (P<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</inf>=1 W, P<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</inf>=100 mW), it is shown that the thermal-resistance of the chip increases with increasing temperature. The obtained research results presented in the article are recommended for use in the design of high-temperature integrated circuits based on wide-gap semiconductors.