Online Converter-Level Temperature Estimation for IGBTs Using Proportional Calibration Method

In this letter, we propose a novel online converter-level junction temperature <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">j</sub> evaluation method for insulated gate bipolar transistors (IGBTs) based on the common power loop parasitic inductance voltage overshoot of the bus bar. This temperature sensitive electrical parameter is at an appropriate quantity of several volts with relatively high sensitivity. In addition, to address the issue that different converters and different batches of IGBT modules need to be calibrated repeatedly, this letter proposes a proportional calibration method. Double-pulse test reveals the temperature dependence, and online experimental results of the three-phase converter with calibration method provide a basis for industrial application of the proposed junction temperature estimation method.

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Publication Details

Journal
IEEE Transactions on Power Electronics
Published
2024-10-18
DOI
https://doi.org/10.1109/tpel.2024.3483768
Citations
4
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
Field-Weighted Citation Impact
0.83

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article

Online Converter-Level Temperature Estimation for IGBTs Using Proportional Calibration Method

Chun He, Xinbin Fang, Pengju Sun, Bo Wang
4 citations
IEEE Transactions on Power Electronics
Silicon Carbide Semiconductor Technologies
0.83
article

Online Converter-Level Temperature Estimation for IGBTs Using Proportional Calibration Method

Chun He, Xinbin Fang, Pengju Sun, Bo Wang
article en
4 citations

Abstract

In this letter, we propose a novel online converter-level junction temperature <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">j</sub> evaluation method for insulated gate bipolar transistors (IGBTs) based on the common power loop parasitic inductance voltage overshoot of the bus bar. This temperature sensitive electrical parameter is at an appropriate quantity of several volts with relatively high sensitivity. In addition, to address the issue that different converters and different batches of IGBT modules need to be calibrated repeatedly, this letter proposes a proportional calibration method. Double-pulse test reveals the temperature dependence, and online experimental results of the three-phase converter with calibration method provide a basis for industrial application of the proposed junction temperature estimation method.

IEEE Transactions on Power ElectronicsVol. 40(1)
Chongqing University (CN), Beijing Founder Electronics (China) (CN)
National Natural Science Foundation of China
Affordable and clean energy
Openalex Percentile: Top 26%
Silicon Carbide Semiconductor Technologies
0.83
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