Microresonator-enhanced quantum dot single-photon emission in GaAs-on-insulator platform

Abstract Single-photon emitters play a crucial role in integrated photonic quantum systems across various material platforms. In this study, we present a cavity-enhanced quantum dot single-photon source in a high-index contrast material platform (GaAs-on-insulator). A quantum dot is embedded in a microring resonator with a quality factor of approximately 9000, where the cavity-induced light enhancement results in a spontaneous emission acceleration factor of around 2.6, and we achieve a <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mrow> <mml:msup> <mml:mi>g</mml:mi> <mml:mrow> <mml:mo stretchy="false">(</mml:mo> <mml:mn>2</mml:mn> <mml:mo stretchy="false">)</mml:mo> </mml:mrow> </mml:msup> <mml:mo stretchy="false">(</mml:mo> <mml:mn>0</mml:mn> <mml:mo stretchy="false">)</mml:mo> </mml:mrow> </mml:math> as low as 0.03 ± 0.02 and post-selected two-photon interference visibility of 51.7 <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mrow> <mml:mi mathvariant="normal">%</mml:mi> <mml:mo>±</mml:mo> <mml:mn>3.2</mml:mn> <mml:mi mathvariant="normal">%</mml:mi> </mml:mrow> </mml:math> for the single-photon source. This demonstration shows the potential of the GaAs-on-Insulator platform for scalable on-chip quantum information processing.