Nano device fabrication for in-memory and in-sensor reservoir computing

Abstract Recurrent neural networks (RNNs) have proven to be indispensable for processing sequential and temporal data, with extensive applications in language modeling, text generation, machine translation, and time-series forecasting. Despite their versatility, RNNs are frequently beset by significant training expenses and slow convergence times, which impinge upon their deployment in edge AI applications. Reservoir computing (RC), a specialized RNN variant, is attracting increased attention as a cost-effective alternative for processing temporal and sequential data at the edge. RC’s distinctive advantage stems from its compatibility with emerging memristive hardware, which leverages the energy efficiency and reduced footprint of analog in-memory and in-sensor computing, offering a streamlined and energy-efficient solution. This review offers a comprehensive explanation of RC’s underlying principles, fabrication processes, and surveys recent progress in nano-memristive device based RC systems from the viewpoints of in-memory and in-sensor RC function. It covers a spectrum of memristive device, from established oxide-based memristive device to cutting-edge material science developments, providing readers with a lucid understanding of RC’s hardware implementation and fostering innovative designs for in-sensor RC systems. Lastly, we identify prevailing challenges and suggest viable solutions, paving the way for future advancements in in-sensor RC technology.

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Publication Details

Journal
International Journal of Extreme Manufacturing
Published
2024-10-18
DOI
https://doi.org/10.1088/2631-7990/ad88bb
Citations
20
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
4.17

Funders

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article

Nano device fabrication for in-memory and in-sensor reservoir computing

Jieyu You, Linfeng Sun, Zhongrui Wang, Renjing Xu et al.
20 citations
International Journal of Extreme Manufacturing
Advanced Memory and Neural Computing
4.17
article

Nano device fabrication for in-memory and in-sensor reservoir computing

Jieyu You, Linfeng Sun, Zhongrui Wang, Renjing Xu, Xi Chen, Yinan Lin, Qianyu Zhang
article en
20 citations

Abstract

Abstract Recurrent neural networks (RNNs) have proven to be indispensable for processing sequential and temporal data, with extensive applications in language modeling, text generation, machine translation, and time-series forecasting. Despite their versatility, RNNs are frequently beset by significant training expenses and slow convergence times, which impinge upon their deployment in edge AI applications. Reservoir computing (RC), a specialized RNN variant, is attracting increased attention as a cost-effective alternative for processing temporal and sequential data at the edge. RC’s distinctive advantage stems from its compatibility with emerging memristive hardware, which leverages the energy efficiency and reduced footprint of analog in-memory and in-sensor computing, offering a streamlined and energy-efficient solution. This review offers a comprehensive explanation of RC’s underlying principles, fabrication processes, and surveys recent progress in nano-memristive device based RC systems from the viewpoints of in-memory and in-sensor RC function. It covers a spectrum of memristive device, from established oxide-based memristive device to cutting-edge material science developments, providing readers with a lucid understanding of RC’s hardware implementation and fostering innovative designs for in-sensor RC systems. Lastly, we identify prevailing challenges and suggest viable solutions, paving the way for future advancements in in-sensor RC technology.

International Journal of Extreme ManufacturingVol. 7(1)
Beijing Institute of Technology (CN), Hong Kong Science and Technology Parks Corporation (HK), Southern University of Science and Technology (CN), University of Hong Kong (HK), South China University of Technology (CN)
Science, Technology and Innovation Commission of Shenzhen Municipality, National Key Research and Development Program of China
Openalex Percentile: Top 5%
Advanced Memory and Neural Computing
4.17
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