Measurement of Neutron-Induced Single-Event Upset Cross Section of UltraScale Kintex FPGA Using Time-of-Flight Technique

The correlation between neutron energy and neutron-induced soft error rate (SER) is crucial for estimating the impact on electronic devices fabricated using complementary metal-oxide-semiconductor (CMOS) technology in diverse neutron environments, including those found in high-energy physics experiments, aviation settings, and so on. This article presents an investigation conducted independently at China spallation neutron source (CSNS) using the Back-n white neutron source and atmospheric neutron irradiation spectrometer (ANIS) neutron source to directly measure single-event upset (SEU) effects of the configuration random access memory (CRAM) and block random access memory (BRAM) in 20-nm CMOS technology-based UltraScale Kintex FPGA. By recording the frequency of SEU events and the time of flight (TOF), SEU cross sections can be calculated for different energies. Experiment in situ indicates a coherent alignment of different outcomes under neutron irradiation from Back-n and ANIS, despite their different neutron energy spectra. The SEU threshold energy is estimated to be <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$0.69~\pm ~0.076$ </tex-math></inline-formula> MeV for CRAM and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$0.80~\pm ~0.013$ </tex-math></inline-formula> MeV for BRAM. The measured cross sections can reach saturation of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$6.9\times 10^{-15}$ </tex-math></inline-formula> cm2/bit and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1.6\times 10^{-14}$ </tex-math></inline-formula> cm2/bit for CRAM and BRAM, respectively, while the neutron energy is about 20 MeV.

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Publication Details

Journal
IEEE Transactions on Nuclear Science
Published
2024-10-18
DOI
https://doi.org/10.1109/tns.2024.3482881
Citations
1
Primary Topic
Radiation Effects in Electronics
Type
article
Field-Weighted Citation Impact
0.21

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article

Measurement of Neutron-Induced Single-Event Upset Cross Section of UltraScale Kintex FPGA Using Time-of-Flight Technique

Yina Liu, Xianpeng Zhang, Chong Zou, Zepeng Wu et al.
1 citations
IEEE Transactions on Nuclear Science
Radiation Effects in Electronics
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article

Measurement of Neutron-Induced Single-Event Upset Cross Section of UltraScale Kintex FPGA Using Time-of-Flight Technique

Yina Liu, Xianpeng Zhang, Chong Zou, Zepeng Wu, Cong Xia, Bo Li, Zhihao Zhou, Zhizhou Ren, Ling Kang, Shengda Tang, Xiao Li, Yijia Qiu, Jie Ren, Li-Jiao Wang, Xichao Ruan, Zhixin Tan, Guangyuan Luan, C. Q. Feng, Ruirui Fan, Lichang Wang, Jie Bao, Zhaohui Wang, Hanxiong Huang, Hangchang Zhang, Wenhao Duan, Yongcheng He, Zhijie Jiang, Qiping Chen, Yao Teng, Changlin Lan, Xuan Wu, Bin Zhou, Wenkai Ren, Changcai Han, Yonghao Chen, Rong Liu, Zhiyong Zhang, Lei Zhao, Feng Li, Qiang Li, Jie Liu, Zhaohui Song, Zhizhen Qin, Qiwei Zhang, Guohui Zhang, Shubin Liu, Yuliang Zhang, Kejun Zhu, Zhengtao Liu, Guozhu He, Yiwei Hu, Maoyuan Zhao, Wei Jiang, Kang Sun, Ping Cao, Yi Han, Yang Li, Tao Yu, Zijie Han, Anchuan Fan, Zhiliang Hu, Changjun Ning, Xiao-Guang Wu, Likun Xie, Yang Hong, Jiangbo Bai, Haofan Bai, Songsong Tang, Yongji Yu, Jincheng Wang, Minhao Gu, Zhongwei Wen, Jingyu Tanga
article en
1 citations

Abstract

The correlation between neutron energy and neutron-induced soft error rate (SER) is crucial for estimating the impact on electronic devices fabricated using complementary metal-oxide-semiconductor (CMOS) technology in diverse neutron environments, including those found in high-energy physics experiments, aviation settings, and so on. This article presents an investigation conducted independently at China spallation neutron source (CSNS) using the Back-n white neutron source and atmospheric neutron irradiation spectrometer (ANIS) neutron source to directly measure single-event upset (SEU) effects of the configuration random access memory (CRAM) and block random access memory (BRAM) in 20-nm CMOS technology-based UltraScale Kintex FPGA. By recording the frequency of SEU events and the time of flight (TOF), SEU cross sections can be calculated for different energies. Experiment in situ indicates a coherent alignment of different outcomes under neutron irradiation from Back-n and ANIS, despite their different neutron energy spectra. The SEU threshold energy is estimated to be <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$0.69~\pm ~0.076$ </tex-math></inline-formula> MeV for CRAM and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$0.80~\pm ~0.013$ </tex-math></inline-formula> MeV for BRAM. The measured cross sections can reach saturation of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$6.9\times 10^{-15}$ </tex-math></inline-formula> cm2/bit and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1.6\times 10^{-14}$ </tex-math></inline-formula> cm2/bit for CRAM and BRAM, respectively, while the neutron energy is about 20 MeV.

IEEE Transactions on Nuclear ScienceVol. 71(12)
University of Science and Technology of China (CN), Chinese Academy of Sciences (CN), Peking University (CN), Fudan University (CN), China Academy of Engineering Physics (CN), China Institute of Atomic Energy (CN), China Spallation Neutron Source (CN), Institute of Modern Physics (CN), Institute of High Energy Physics (CN), Northwest Institute of Nuclear Technology (CN), State Key Laboratory of Nuclear Physics and Technology
National Natural Science Foundation of China, National Key Research and Development Program of China
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Radiation Effects in Electronics
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