A-Site Doping Promotes CO<sub>2</sub> Activation and Prolongs Charge Carrier Lifetimes in SrTiO<sub>3</sub>: Insight from Quantum Dynamics
Using time-dependent density functional theory and nonadiabatic molecular dynamics, we systematically investigated the effect of A-site doping on the CO<sub>2</sub> activation and charge carrier lifetimes in SrTiO<sub>3</sub>(STO). Our simulations revealed that A-site doping significantly enhances the chemical adsorption of CO<sub>2</sub> on SrTiO<sub>3</sub> surfaces, which is beneficial for promoting CO<sub>2</sub> activation. Moreover, we found that A-site doping can efficiently stabilize the lowest unoccupied molecular orbital (LUMO) of CO<sub>2</sub> near the conduction band minimum of STO, promoting the photogenerated electron transfer from the conduction band of STO to the CO<sub>2</sub> LUMO. Importantly, A-site doping causes a significant nonadiabatic coupling reduction and prolongs the charge recombination time by a factor of 1.86 compared to the pristine STO. Our study clarifies the influencing mechanism of A-site doping on CO<sub>2</sub> activation and charge carrier lifetimes and suggests important principles for the design of high-performance photocatalytic semiconductors.
Authors
- Jinlu He (ORCID: https://orcid.org/0000-0001-9772-8572)
- Xiaodan Yan (ORCID: https://orcid.org/0009-0009-7409-7451)
Institutions
- Inner Mongolia University (CN)
Publication Details
- Journal
- The Journal of Physical Chemistry Letters
- Published
- 2024-10-18
- DOI
- https://doi.org/10.1021/acs.jpclett.4c02649
- Citations
- 4
- Primary Topic
- Electronic and Structural Properties of Oxides
- Type
- article
- Field-Weighted Citation Impact
- 0.47
Funders
- Education Department of Inner Mongolia Autonomous Region
- National Natural Science Foundation of China
- Inner Mongolia University