Local Strain‐Dependent Etching Patterns of Chemical Vapor Deposited Molybdenum Disulfide

This study reveals a local strain-dependent etching behavior that enables the formation of distinguished etching patterns in differently strained chemical vapor deposited (CVD) 2D molybdenum disulfide (MoS₂) monolayers. It is demonstrated that when the local tensile strain of CVD 2D MoS₂ is as uniformly low as ɛ ≈ 0.33% or less, the oxidative etching pattern possesses conventional triangular etching pits (TEPs), while when the local tensile strain is as uniformly high as ɛ ≈ 0.55% or larger, the oxidative etching pattern consist of uniformly oriented hexagonal etching channels (HECs). More interestingly, when the CVD 2D MoS₂ monolayer has heterogenous strain distribution from ɛ ≈ 0.55% (center region) to ɛ ≈ 0.33% (perimeter region), the oxidative etching pattern comprise of non-uniformly hexagonal-mixed-parallel etching channels (HPECs). The further characterization and analysis reveal the formation mechanism of such strain-dependent etching patterns is built on the local strain-related fractures propagation under oxidative etching, as well as the anisotropy fractures-based oxidative etching kinetics. This study may enhance the understanding of the relationship between etching and growth features of 2D TMDs, and paves the way to etching-nanostructured (or defect) engineering of 2D TMDs and other 2D materials for potential applications in electrocatalysis and optoelectronics.