Strain induced phase transitions and hysteresis in aluminium nitride: a density functional theory study

Computer atomistic simulations based on density functional theory were carried out to investigate strain induced phase transitions in aluminium nitride (AlN). The wurtzite to graphitic and graphitic to wurtzite transformations were investigated at the atomic level and their physical origins were identified. Both phase transitions were found to be of the first order. The wurtzite to graphitic phase transition takes place in the tensile regime at a strain value of +7%. The driving force for this transformation was identified to be an elastic instability induced by tensile strain. A hysteresis was demonstrated where the graphitic structure is separated from the wurtzite by a kinetic energy barrier. The origin of the observed hysteresis is due to the asymmetry of bond formation and bond breaking associated with the wurtzite to graphitic and graphitic to wurtzite transitions, respectively. A dynamic instability taking place at +3%, along the graphitic path, prevents the hysteresis to fully occur. The possible occurrence of the hysteresis has then to be taken into account when growing the graphitic phase by heteroepitaxy. Otherwise, maintaining the graphitic structure at low strain, through the hysteresis, offers new possibilities in the development of novel future applications.

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Publication Details

Journal
Journal of Physics Condensed Matter
Published
2024-10-17
DOI
https://doi.org/10.1088/1361-648x/ad8852
Primary Topic
GaN-based semiconductor devices and materials
Type
article
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article

Strain induced phase transitions and hysteresis in aluminium nitride: a density functional theory study

Ouahiba Namir, I. Belabbas, Jun Chen
Journal of Physics Condensed Matter
GaN-based semiconductor devices and materials
article

Strain induced phase transitions and hysteresis in aluminium nitride: a density functional theory study

Ouahiba Namir, I. Belabbas, Jun Chen
article en

Abstract

Computer atomistic simulations based on density functional theory were carried out to investigate strain induced phase transitions in aluminium nitride (AlN). The wurtzite to graphitic and graphitic to wurtzite transformations were investigated at the atomic level and their physical origins were identified. Both phase transitions were found to be of the first order. The wurtzite to graphitic phase transition takes place in the tensile regime at a strain value of +7%. The driving force for this transformation was identified to be an elastic instability induced by tensile strain. A hysteresis was demonstrated where the graphitic structure is separated from the wurtzite by a kinetic energy barrier. The origin of the observed hysteresis is due to the asymmetry of bond formation and bond breaking associated with the wurtzite to graphitic and graphitic to wurtzite transitions, respectively. A dynamic instability taking place at +3%, along the graphitic path, prevents the hysteresis to fully occur. The possible occurrence of the hysteresis has then to be taken into account when growing the graphitic phase by heteroepitaxy. Otherwise, maintaining the graphitic structure at low strain, through the hysteresis, offers new possibilities in the development of novel future applications.

Journal of Physics Condensed MatterVol. 37(3)
Centre National de la Recherche Scientifique (FR), University of Béjaïa (DZ), Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR), Normandie Université (FR), Délégation Normandie (FR), Université de Caen Normandie (FR)
Openalex Percentile: Top 89%
GaN-based semiconductor devices and materials
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Strain induced phase transitions and hysteresis in aluminium nitride: a density functional theory study — Ouahiba Namir, I. Belabbas, et al. · Journal of Physics Condensed Matter (2024) | TGRS Research Map | TGRS