Analysis and stress optimization of a strained germanium tin light-emitting diode with silicon nitride stressor

Modifying germanium to achieve efficient light emission holds great potential in the field of silicon-based light sources. We propose a method of introducing stress by repeatedly etching trenches and filling them with silicon nitride (SiN). By combining germanium tin (GeSn) alloys with an external stress layer of SiN, efficient modification of germanium is achieved. We performed process and device simulations on the structure, and the results showed that ∼0.8 GPa of biaxial tensile stress was introduced into the active region of the light-emitting diode, with a peak wavelength of 2200 nm and a maximum photoelectric conversion efficiency of about 5%. The device structure we proposed provides an effective solution for realizing silicon-based integrated light sources.