Spin Current Enhancement Using Double-Ferromagnetic-Layer Structure for Magnetoelectric Spin-Orbit Logic Device

The use of Moore’s law appears to be coming to an end due to technological and physical constraints, as complementary metal-oxide semiconductor (CMOS) transistors become smaller and closer to the atomic scale. Therefore, various emerging technologies are being researched as potential successors to traditional CMOS transistors, and one of the most exciting candidates is the magnetoelectric spin-orbit (MESO) device. The MESO device comprises two portions (input and output) and it cascades charge/voltage as input and output signals. In the MESO device’s output portion, ferromagnetic (FM) and high-spin-orbit-coupling layers are employed to provide spin-polarized current and charge/voltage output. In this paper, we offer a description and analysis of the operating mechanism of the MESO device’s output portion using a spin flow approach and propose a double-FM-layer structure. In the double-FM-layer structure, we implement two FM layers with antiparallel magnetization directions, instead of using a single-FM-layer structure to increase the output charge/voltage. The proposed structure is verified through the Verilog-A compact model.