Optoelectronic properties of GaP:Ti photovoltaic devices

Supersaturated GaP is of interest for the photovoltaic field since optical transitions at energies below the bandgap (2.26 eV) could enhance the overall device efficiency up to theoretically 60%. We have previously demonstrated that Ti supersaturated GaP can be obtained by means of ion implantation and pulsed-laser melting with high structural quality and measured its below-bandgap photoconductivity. In this work we report the first results of a GaP:Ti based photovoltaic device. We have fabricated and measured photovoltaic devices with a GaP:Ti absorber layer showing enhanced external quantum efficiency at wavelengths above 550 nm. Also, we have measured the absorption coefficient (around 10 4 cm −1 ) and refractive index of this absorber layer. Finally, current-voltage curves in darkness were measured and analyzed using a two-diodes model, showing improvable characteristics. Ideas to enhance the properties of the devices are suggested.

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Publication Details

Journal
Materials Today Sustainability
Published
2024-10-17
DOI
https://doi.org/10.1016/j.mtsust.2024.101008
Citations
1
Primary Topic
Semiconductor Quantum Structures and Devices
Type
article
Field-Weighted Citation Impact
0.34
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article

Optoelectronic properties of GaP:Ti photovoltaic devices

J. Gonzalo, R. García-Hernansanz, E. San Andrés, J. Olea et al.
1 citations
Materials Today Sustainability
Semiconductor Quantum Structures and Devices
0.34
article

Optoelectronic properties of GaP:Ti photovoltaic devices

J. Gonzalo, R. García-Hernansanz, E. San Andrés, J. Olea, S. Duarte-Cano, Alejandro F. Braña, S. Algaidy, Jan Siegel, A. del Prado, I. Mártil, F. Pérez-Zenteno, D. Caudevilla, E. García-Hemme, David Pastor, Guillermo Godoy‐Pérez, R. Benítez-Fernández
article en
1 citations

Abstract

Supersaturated GaP is of interest for the photovoltaic field since optical transitions at energies below the bandgap (2.26 eV) could enhance the overall device efficiency up to theoretically 60%. We have previously demonstrated that Ti supersaturated GaP can be obtained by means of ion implantation and pulsed-laser melting with high structural quality and measured its below-bandgap photoconductivity. In this work we report the first results of a GaP:Ti based photovoltaic device. We have fabricated and measured photovoltaic devices with a GaP:Ti absorber layer showing enhanced external quantum efficiency at wavelengths above 550 nm. Also, we have measured the absorption coefficient (around 10 4 cm −1 ) and refractive index of this absorber layer. Finally, current-voltage curves in darkness were measured and analyzed using a two-diodes model, showing improvable characteristics. Ideas to enhance the properties of the devices are suggested.

Materials Today SustainabilityVol. 28
Universidad Complutense de Madrid (ES), Instituto de Óptica "Daza de Valdés" (ES), Técnicas y Servicios de Ingeniería (Spain) (ES), Universidad Autónoma de Madrid (ES)
Affordable and clean energy
Openalex Percentile: Top 39%
Semiconductor Quantum Structures and Devices
0.34
DOIOpen Access PDFOpenAlex
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