Surface Defect Recovery in Perovskite Nanocrystals with Excess Halide for Core–Shell Structure

We present a method to synthesize stable and uniform high-quality perovskite nanocrystals (PNCs) by using excess halide to recover surface defects in CsPbBr3/ZnS core/shell nanocrystals. Use of N-bromosuccinimide as a halide donor recovered surface halide vacancies of bare CsPbBr3 PNCs during the growth of the ZnS shell, as confirmed by DFT calculations. This approach achieves a high photoluminescence quantum yield of nearly 1, and significantly increases the stability of PNCs under adverse conditions such as high humidity and elevated temperature. CsPbBr3/ZnS PNC light-emitting diodes demonstrated outstanding luminous characteristics, with a remarkable external quantum efficiency of 12.77% and a maximum luminance of 1449 cd m–2 at 517 nm. These characteristics of the PNCs will have a wide variety of applications and will help enable development of highly efficient optoelectronic devices.

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Publication Details

Journal
ACS Energy Letters
Published
2024-10-16
DOI
https://doi.org/10.1021/acsenergylett.4c01870
Citations
18
Primary Topic
Perovskite Materials and Applications
Type
article
Field-Weighted Citation Impact
3.76

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article

Surface Defect Recovery in Perovskite Nanocrystals with Excess Halide for Core–Shell Structure

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ACS Energy Letters
Perovskite Materials and Applications
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article

Surface Defect Recovery in Perovskite Nanocrystals with Excess Halide for Core–Shell Structure

Yong‐Young Noh, Gyudong Lee, Hochan Song, Seokhyun Choung, Jeong Woo Han, Hyosung Choi, Myeonggeun Han, Ji Won Jang, Sang‐Hun Han, Woo Hyeon Jeong, Gyeong Eun Seok, Ji-Hoon Kim, Bo Ram Lee, Jongmin Choi, Dong Hyeon Lee
article en
18 citations

Abstract

We present a method to synthesize stable and uniform high-quality perovskite nanocrystals (PNCs) by using excess halide to recover surface defects in CsPbBr3/ZnS core/shell nanocrystals. Use of N-bromosuccinimide as a halide donor recovered surface halide vacancies of bare CsPbBr3 PNCs during the growth of the ZnS shell, as confirmed by DFT calculations. This approach achieves a high photoluminescence quantum yield of nearly 1, and significantly increases the stability of PNCs under adverse conditions such as high humidity and elevated temperature. CsPbBr3/ZnS PNC light-emitting diodes demonstrated outstanding luminous characteristics, with a remarkable external quantum efficiency of 12.77% and a maximum luminance of 1449 cd m–2 at 517 nm. These characteristics of the PNCs will have a wide variety of applications and will help enable development of highly efficient optoelectronic devices.

ACS Energy LettersVol. 9(11)
Pohang University of Science and Technology (KR), Seoul National University (KR), Daegu Gyeongbuk Institute of Science and Technology (KR), Center for Micro-BioRobotics (IT), Division of Materials Science and Engineering (AU), Applied Natural Sciences (US), Hanyang University (KR), Sungkyunkwan University (KR)
National Research Foundation of Korea, Daegu Gyeongbuk Institute of Science and Technology
Openalex Percentile: Top 6%
Perovskite Materials and Applications
3.76
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