High color rendering index WLEDs enabled by multi-band tuning of InP quantum dots

Quantum dots (QDs) represent a significant class of fluorescent materials, offering the potential to reduce power consumption and enhance the color rendering index (CRI) of white light-emitting diode (WLED) devices. However, the presence of toxic elements such as Cd and Pb in traditional fluorescent QDs limits their widespread commercial application. Compared to the broad emission characteristics of environmentally friendly AgInS 2 and CuInS 2 QDs, the narrower linewidth of InP-based core-shell QDs is advantageous for developing WLED devices with a higher CRI. In this study, we employed a multistage heating method to synthesize a series of amino-phosphine-based InP/ZnSe core-shell QDs, which exhibited emission wavelengths ranging from 535 to 650 nm, narrow emission linewidths of 43-47 nm, and high photoluminescence quantum yields of 60%-80%. Subsequently, six different color QDs are used to fabricate a WLED device. The best WLEDs show not only bright warm light (correlated color temperature = 3323 K) with a maximum luminous efficacy of 74.1 lm W -1 , but also excellent color quality (CRI Ra = 93, as well as R9 = 94.8, and R13 = 97.1). These results indicate remarkable progress in InP-based WLEDs for high-quality lighting applications.