Fabrication, compact & device modeling of 4H–21DNTT organic thin film transistor

Abstract In this study, we explored a novel organic semiconductor (OSC), 6,6 bis-(trans4-butylcyclohexyl) dinaphtho[2,1-b:2,1-f]thieno[3,2-b]thiophene (4H–21DNTT). The work also includes a TCAD device model for optimizing and improving the device performance. Both the experimental and simulated results have demonstrated sufficient mobility to realize complex circuits. To validate its potential, a compact model was developed and employed in the SPICE simulator for complex-circuit simulations. Both models accurately capture the below-threshold, linear, and saturation operating conditions through a unified approach, removing the necessity for explicitly defining the threshold and saturation voltages.