Suppressing SiC MOSFET switching overshoot and oscillation with an on-chip integrated active gate driver

Power silicon carbide (SiC) MOSFETs are gradually replacing silicon-based power devices in industrial production due to their higher switching speed, lower switching loss, and higher operating temperature capabilities, especially in high power density and high-efficiency power electronic applications. However, the higher switching speed also brings about issues such as voltage and current overshoots, oscillations. This paper proposes an on-chip integrated active gate driver for SiC MOSFETs, the principle of this circuit is to turn off some PMOS/NMOS during the switching process, which has a significant impact on the above problems, to reduce the driving current, in the stage where the impact on the above problems is insignificant, more PMOS/NMOS are turned on to increase the driving current, this approach aims to mitigate overshoots, oscillations, while maximizing the switching speed and minimizing power consumption. Compared to PCB-level active gate drivers, the on-chip integrated active gate driver have advantages in terms of reducing size, decreasing delay, and lowering application complexity. Finally, simulation results of the proposed driver under various conditions are provided.