Design and performance of low time jitter readout circuits based on SiPM

Silicon Photomultipliers (SiPM) is a low light detection sensor with a wide range of applications. The readout circuits of SiPM need to be optimized for time jitter in applications that require high time performance. This paper reports three readout circuits for SiPM (Hamamatsu S14160-4050HS), using radio frequency (RF) amplification method, transimpedance (TIA) amplification method with voltage and current feedback operational amplifiers. The effect of different sampling resisters or feedback resisters on the signal rise time was tested. The increase of rise time when the sampling resistance is very small in the test results is simulated and analyzed, which is considered to be the influence of parasitic parameters. The time jitter of the SiPM at different overbias voltages was tested using three circuits. Among them, the time performance of RF circuit and current feedback TIA is better, and the time jitter of RF circuit can reach about 100 ps FWHM.

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Publication Details

Published
2024-10-16
DOI
https://doi.org/10.1117/12.3033752
Primary Topic
Phase-change materials and chalcogenides
Type
article
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article

Design and performance of low time jitter readout circuits based on SiPM

Ruiying Li
Phase-change materials and chalcogenides
article

Design and performance of low time jitter readout circuits based on SiPM

Ruiying Li
article en

Abstract

Silicon Photomultipliers (SiPM) is a low light detection sensor with a wide range of applications. The readout circuits of SiPM need to be optimized for time jitter in applications that require high time performance. This paper reports three readout circuits for SiPM (Hamamatsu S14160-4050HS), using radio frequency (RF) amplification method, transimpedance (TIA) amplification method with voltage and current feedback operational amplifiers. The effect of different sampling resisters or feedback resisters on the signal rise time was tested. The increase of rise time when the sampling resistance is very small in the test results is simulated and analyzed, which is considered to be the influence of parasitic parameters. The time jitter of the SiPM at different overbias voltages was tested using three circuits. Among them, the time performance of RF circuit and current feedback TIA is better, and the time jitter of RF circuit can reach about 100 ps FWHM.

Beijing University of Posts and Telecommunications (CN)
Affordable and clean energy
Openalex Percentile: Top 89%
Phase-change materials and chalcogenides
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