An understanding of the segregation and migration mechanism of point defects in tungsten grain boundaries: An atomic scale simulation

• V and SIA tend to segregate towards the GB core region. • The interaction of V/SIA and GB is affected by free volume and lattice distortion. • V prefers to migrate from bulk to GB, while SIA migrates to GB without barriers. • V tends to occupy the compressive region and SIA tends to occupy the tensile region. In this study, molecular dynamics (MD) simulations are employed to investigate the interactions between point defects and grain boundaries (GBs) in tungsten. Firstly, the segregation energy of vacancies (Vs) and self-interstitial atoms (SIAs) to GBs is examined. The results indicate that both Vs and SIAs tend to segregate towards GBs. Notably, the different types of GBs exhibit varying attraction to Vs and SIAs. The interaction radius is applied to investigate the degree of segregation, which is a significant index of GBs’ attraction to Vs and SIAs. The segregation radius of SIAs is typically larger than that of Vs. High-angle grain boundaries (HAGBs) show strong segregation for SIAs, facilitating the aggregation at GBs. Additionally, elastic theory is applied to qualitatively discuss the factors influencing the segregation energy distribution. The differences in atomic free volume caused by hydrostatic stress and the lattice distortion induced by point defects lead to Vs and SIAs occupying different sites. Finally, the nudged elastic band (NEB) method is employed to study the migration of Vs and SIAs near GBs, revealing that migration energy barriers for Vs and SIAs in GBs are much lower than in bulk. GBs facilitate the migration of point defects. Low-angle grain boundaries (LAGBs) present a higher energy barrier for V migration. Vs tend to occupy the compressive region, while SIAs tend to occupy the tensile region. Particularly, in comparison to Vs, SIAs are more likely to segregate to GBs due to higher binding energy, wider interaction radius, and extremely lower diffusion energy barrier. This provides some insights into the segregation and migration of point defects in GBs.

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Publication Details

Journal
Nuclear Materials and Energy
Published
2024-10-16
DOI
https://doi.org/10.1016/j.nme.2024.101771
Primary Topic
Microstructure and mechanical properties
Type
article
Field-Weighted Citation Impact
0.00

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article

An understanding of the segregation and migration mechanism of point defects in tungsten grain boundaries: An atomic scale simulation

Yawen Li, Wei Wu, Guang–Nan Luo, Bai-Chuan Xu et al.
Nuclear Materials and Energy
Microstructure and mechanical properties
article

An understanding of the segregation and migration mechanism of point defects in tungsten grain boundaries: An atomic scale simulation

Yawen Li, Wei Wu, Guang–Nan Luo, Bai-Chuan Xu, Xiao-Chun Li, Ziqi Li, Yi-Lang Mai, Hai-Shan Zhou
article en

Abstract

• V and SIA tend to segregate towards the GB core region. • The interaction of V/SIA and GB is affected by free volume and lattice distortion. • V prefers to migrate from bulk to GB, while SIA migrates to GB without barriers. • V tends to occupy the compressive region and SIA tends to occupy the tensile region. In this study, molecular dynamics (MD) simulations are employed to investigate the interactions between point defects and grain boundaries (GBs) in tungsten. Firstly, the segregation energy of vacancies (Vs) and self-interstitial atoms (SIAs) to GBs is examined. The results indicate that both Vs and SIAs tend to segregate towards GBs. Notably, the different types of GBs exhibit varying attraction to Vs and SIAs. The interaction radius is applied to investigate the degree of segregation, which is a significant index of GBs’ attraction to Vs and SIAs. The segregation radius of SIAs is typically larger than that of Vs. High-angle grain boundaries (HAGBs) show strong segregation for SIAs, facilitating the aggregation at GBs. Additionally, elastic theory is applied to qualitatively discuss the factors influencing the segregation energy distribution. The differences in atomic free volume caused by hydrostatic stress and the lattice distortion induced by point defects lead to Vs and SIAs occupying different sites. Finally, the nudged elastic band (NEB) method is employed to study the migration of Vs and SIAs near GBs, revealing that migration energy barriers for Vs and SIAs in GBs are much lower than in bulk. GBs facilitate the migration of point defects. Low-angle grain boundaries (LAGBs) present a higher energy barrier for V migration. Vs tend to occupy the compressive region, while SIAs tend to occupy the tensile region. Particularly, in comparison to Vs, SIAs are more likely to segregate to GBs due to higher binding energy, wider interaction radius, and extremely lower diffusion energy barrier. This provides some insights into the segregation and migration of point defects in GBs.

Nuclear Materials and EnergyVol. 41
University of Science and Technology of China (CN), Harbin Engineering University (CN), City University of Hong Kong (HK), Chinese Academy of Sciences (CN), Hefei Institutes of Physical Science (CN), Institute of Plasma Physics (CN)
National Natural Science Foundation of China
Reduced inequalities
Openalex Percentile: Top 89%
Microstructure and mechanical properties
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