A THEORETICAL STUDY OF THE PHYSICAL PROPERTIES OF HEXAGONAL GALLIUM NITRATE USING DENSITY FUNCTIONAL THEORY

First-principles calculations based on density functional theory (DFT) have been used to investigate structural, electronic, optical and thermodynamic aspects of the α-GaN crystal. Based on local density approximations (LDA), Generalized gradient approximation (GGA) and meta-generalized gradient approximation (m-GGA) functional methods, the band gap energies of α-GaN crystals have been estimated as 1.962 eV, 2.069 eV and 2.354 eV. The band gap energies that are presented in these studies are in accordance with the ones from the other experimental and theoretical studies. Besides, our findings give us knowledge about the electronic and optical properties of α-GaN crystal. The band gap energies in the α-GaN crystal are the key factors that define its electrical and optical characteristics. They are the energy range in which the electrons can be exited from the valence band to the conduction band, which in turn affects the material's conductivity and the ability of the material to absorb and emit light. The approximate of our results with the previous researches indicates the reliability of our findings and thus increases our knowledge of α-GaN's electronic and optical phenomena. The orbital characteristics of the Ga and N atoms were found by simulating the density of state and the partial density of state for α-GaN. Besides the analysis of the band structure, density of states and optical properties of the compound we also included. The results show that α-GaN has a direct bandgap, which is at the G point in the Brillouin zone. This is the reason for its great potential for the development of optoelectronic devices. Also, we use the three approximations that are given earlier to find the optical characteristics (the absorption coefficient) of the compound. In addition to that, the thermodynamic properties that can be calculated like Debye temperature, enthalpy, free energy, entropy and heat capacity enable us to understand the thermal behavior of the compound better. The heat capacity of α-GaN is detected to be 17.3 Jmole-1K-1, with a Debye temperature of 824.6K. This research will offer a detailed interpretation of α- G-N, covering all its basic properties and the possible applications in optoelectronic and electronic devices. The results of this study are very important and the new technologies that will be developed based on the α-GaN research will be very beneficial.