CURRENT OSCILLATIONS IN IMPURITY SEMICONDUCTORS WITH BOTH SIGNS OF CURRENT CARRIERS IN THE PRESENCE OF AN EXTERNAL ELECTRIC FIELD, A TEMPERATURE GRADIENT AND A WEAK MAGNETIC FIELD (μ_± H<<C)

It is theoretically shown for the first time that in an external electric and weak magnetic fields, when there is a temperature gradient, an impurity semiconductor radiates energy from itself with a certain frequency. The values of the frequency of current oscillations and the limit of change of the external electric field are found. It is shown that the resistance in the medium has only ohmic character. It is stated that in the above semiconductor, when the concentration of electrons and holes are determined from the obtained expression in theory, the injection of contacts plays a major role for the appearance of the indicated current oscillation in the circuit.