PHOTOELECTRICAL PROPERTIES OF CdMnSe THIN FILMS

The studied semiconductor structure for photovoltaic cells is composed of SnO2-coated glass and CdMnSe thin film. A study is made by examining the photoluminescence from the surface of the CdMnSe thin film with laser power and sample temperature for an as-grown, then an air-annealed thin film and undergone CdCl2 treatment. Thin films of Cd1-xMnxSe (x=0.02) were grown on a glass substrate. The lifetime of charge carriers under pulsed illumination was determined from the kinetic decay of the photocurrent. The study of relaxation curves of nonequilibrium photoconductivity under the influence of laser radiation confirmed the presence of two recombination channels - intrinsic and impurity. Photocurrent relaxation occurs through fast and slow recombination channels. The fast relaxation time τ = 6 μs associated with the intrinsic transition and the slow relaxation time is due to impurity excitation and τ = 22 μs. The photoluminescence spectra of thin films of Cd1-xMnxSe (x=0.02) were studied. In the photoluminescence study, two maxima are observed due to donor-acceptor recombination and intracenter transition of Mn atom.