Two‐Dimensional MoS<sub>2</sub>‐Based Anisotropic Synaptic Transistor for Neuromorphic Computing by Localized Electron Beam Irradiation

Neuromorphic computing, a promising solution to the von Neumann bottleneck, is paving the way for the development of next-generation computing and sensing systems. Axon-multisynapse systems enable the execution of sophisticated tasks, making them not only desirable but essential for future applications in this field. Anisotropic materials, which have different properties in different directions, are being used to create artificial synapses that can mimic the functions of biological axon-multisynapse systems. However, the restricted variety and unadjustable conductive ratio limit their applications. Here, it is shown that anisotropic artificial synapses can be achieved on isotropic materials with externally localized doping via electron beam irradiation (EBI) and purposefully induced trap sites. By employing the synapses along different directions, artificial neural networks (ANNs) are constructed to accomplish variable neuromorphic tasks with optimized performance. The localized doping method expands the axon-multisynapse device family, illustrating that this approach has tremendous potentials in next-generation computing and sensing systems.

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Publication Details

Journal
Advanced Science
Published
2024-10-16
DOI
https://doi.org/10.1002/advs.202408210
Citations
15
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
3.13

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article

Two‐Dimensional MoS2‐Based Anisotropic Synaptic Transistor for Neuromorphic Computing by Localized Electron Beam Irradiation

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15 citations
Advanced Science
Advanced Memory and Neural Computing
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article

Two‐Dimensional MoS2‐Based Anisotropic Synaptic Transistor for Neuromorphic Computing by Localized Electron Beam Irradiation

Juan Dou, Chunlan Wang, Yang Chai, Lei Liao, Hao Huang, Xuming Zou, Chunsen Liu, Peng Gao, Han He, Lei Liu, Jingli Wang, Tuo Shi, Zijun Chen, Mengru Zhang, Jianlu Wang, Peng Zhou
article en
15 citations

Abstract

Neuromorphic computing, a promising solution to the von Neumann bottleneck, is paving the way for the development of next-generation computing and sensing systems. Axon-multisynapse systems enable the execution of sophisticated tasks, making them not only desirable but essential for future applications in this field. Anisotropic materials, which have different properties in different directions, are being used to create artificial synapses that can mimic the functions of biological axon-multisynapse systems. However, the restricted variety and unadjustable conductive ratio limit their applications. Here, it is shown that anisotropic artificial synapses can be achieved on isotropic materials with externally localized doping via electron beam irradiation (EBI) and purposefully induced trap sites. By employing the synapses along different directions, artificial neural networks (ANNs) are constructed to accomplish variable neuromorphic tasks with optimized performance. The localized doping method expands the axon-multisynapse device family, illustrating that this approach has tremendous potentials in next-generation computing and sensing systems.

Advanced ScienceVol. 11(45)
Hong Kong Polytechnic University (HK), Guangxi University (CN), Hunan University (CN), Fudan University (CN), Xi'an Polytechnic University (CN), Zhejiang Lab (CN), Shanghai Fudan Microelectronics (China) (CN)
National Natural Science Foundation of China, National Key Research and Development Program of China
Openalex Percentile: Top 8%
Advanced Memory and Neural Computing
3.13
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