A Radial Distribution Function Based Recognition Algorithm of Point Defects in Large-Scale β-Ga<sub>2</sub>O<sub>3</sub> Systems

The atomic configurations and concentrations of intrinsic defects profoundly influence the electrical and optical properties of the semiconductor materials. This influence is particularly significant in the case of β-Ga<sub>2</sub>O<sub>3</sub>, which is a highly promising ultrawide bandgap semiconductor characterized by highly complex intrinsic defect configurations. Despite its importance, there is a notable absence of an accurate method to recognize these defects in large-scale atomistic computational modeling. We design an effective algorithm for the explicit identification of various intrinsic point defects in the β-Ga<sub>2</sub>O<sub>3</sub> lattice, which constitutes the integration of the particle swarm optimization (PSO) and K-means clustering (K-MC) methods. Our algorithm attains the recognition accuracy exceeding 95%. Finally, the algorithm is applied to dynamic simulations, where the feasibility of dynamic real-time detection is explored.

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Publication Details

Journal
The Journal of Physical Chemistry Letters
Published
2024-10-16
DOI
https://doi.org/10.1021/acs.jpclett.4c02469
Citations
2
Primary Topic
Ga2O3 and related materials
Type
article
Field-Weighted Citation Impact
0.24

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article

A Radial Distribution Function Based Recognition Algorithm of Point Defects in Large-Scale β-Ga2O3 Systems

Jesper Byggmästar, Zongwei Xu, Flyura Djurabekova, Mengzhi Yan et al.
2 citations
The Journal of Physical Chemistry Letters
Ga2O3 and related materials
0.24
article

A Radial Distribution Function Based Recognition Algorithm of Point Defects in Large-Scale β-Ga2O3 Systems

Jesper Byggmästar, Zongwei Xu, Flyura Djurabekova, Mengzhi Yan, J. Zhao
article en
2 citations

Abstract

The atomic configurations and concentrations of intrinsic defects profoundly influence the electrical and optical properties of the semiconductor materials. This influence is particularly significant in the case of β-Ga<sub>2</sub>O<sub>3</sub>, which is a highly promising ultrawide bandgap semiconductor characterized by highly complex intrinsic defect configurations. Despite its importance, there is a notable absence of an accurate method to recognize these defects in large-scale atomistic computational modeling. We design an effective algorithm for the explicit identification of various intrinsic point defects in the β-Ga<sub>2</sub>O<sub>3</sub> lattice, which constitutes the integration of the particle swarm optimization (PSO) and K-means clustering (K-MC) methods. Our algorithm attains the recognition accuracy exceeding 95%. Finally, the algorithm is applied to dynamic simulations, where the feasibility of dynamic real-time detection is explored.

The Journal of Physical Chemistry LettersVol. 15(42)
University of Helsinki (FI), Tianjin University (CN), Helsinki Institute of Physics (FI), Southern University of Science and Technology (CN)
National Natural Science Foundation of China, Academy of Finland, Norges Forskningsråd, State Key Laboratory of Precision Measurement Technology and Instruments, Shenzhen Fundamental Research Program, Basic and Applied Basic Research Foundation of Guangdong Province
Openalex Percentile: Top 57%
Ga2O3 and related materials
0.24
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A Radial Distribution Function Based Recognition Algorithm of Point Defects in Large-Scale β-Ga<sub>2</sub>O<sub>3</sub> Systems — Jesper Byggmästar, Zongwei Xu, et al. · The Journal of Physical Chemistry Letters (2024) | TGRS Research Map | TGRS