Improved electrical transport properties of La0.8Ba0.2MnO3 films via suppressed electron scattering behavior

La 0.8 Ba 0.2 MnO 3 (LBMO) films were prepared by spin coating on LaAlO 3 substrates with a (00 l ) orientation. The effects of pre−sintering temperatures ( T ps ) on the electrical transport properties of LBMO films were investigated. The combination of microstructure, ionic valence, surface morphology , phenomenological percolation model, and small polaron hopping model revealed that LBMO films exhibited optimized electron−lattice coupling and improved electrical transport properties at higher T ps . In the ferromagnetic metal region, temperature−independent scattering and electron−lattice coupling were suppressed and optimized as the T ps rose, thereby improving the electrical transport properties of LBMO films. In the paramagnetic insulator region, LBMO films exhibited reduced activation energy as the T ps rose, thereby enhancing their delocalization and facilitating polaron hopping to neighboring sites. The provided experimental foundation and conduction mechanisms in different temperature regions were employed to investigate the causes of the improvement process. In sum, the facile control of the electron scattering mechanisms through T ps modulation can provide favorable conditions for application in near room−temperature bolometers .

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Publication Details

Journal
Colloids and Surfaces A Physicochemical and Engineering Aspects
Published
2024-10-16
DOI
https://doi.org/10.1016/j.colsurfa.2024.135566
Citations
4
Primary Topic
Magnetic and transport properties of perovskites and related materials
Type
article
Field-Weighted Citation Impact
0.47

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article

Improved electrical transport properties of La0.8Ba0.2MnO3 films via suppressed electron scattering behavior

Zihao Chen, Jun Ma, Xin Gu, Jiankun Sun et al.
4 citations
Colloids and Surfaces A Physicochemical and Engineering Aspects
Magnetic and transport properties of perovskites and related materials
0.47
article

Improved electrical transport properties of La0.8Ba0.2MnO3 films via suppressed electron scattering behavior

Zihao Chen, Jun Ma, Xin Gu, Jiankun Sun, J. C. Jiang, Xiang Liu, Haitao Wang, Yao Wang, Xiaolu Liang, Xuexing Jiang, Jubo Peng, Zimeng Pan, Zhenyu Wang
article en
4 citations

Abstract

La 0.8 Ba 0.2 MnO 3 (LBMO) films were prepared by spin coating on LaAlO 3 substrates with a (00 l ) orientation. The effects of pre−sintering temperatures ( T ps ) on the electrical transport properties of LBMO films were investigated. The combination of microstructure, ionic valence, surface morphology , phenomenological percolation model, and small polaron hopping model revealed that LBMO films exhibited optimized electron−lattice coupling and improved electrical transport properties at higher T ps . In the ferromagnetic metal region, temperature−independent scattering and electron−lattice coupling were suppressed and optimized as the T ps rose, thereby improving the electrical transport properties of LBMO films. In the paramagnetic insulator region, LBMO films exhibited reduced activation energy as the T ps rose, thereby enhancing their delocalization and facilitating polaron hopping to neighboring sites. The provided experimental foundation and conduction mechanisms in different temperature regions were employed to investigate the causes of the improvement process. In sum, the facile control of the electron scattering mechanisms through T ps modulation can provide favorable conditions for application in near room−temperature bolometers .

Colloids and Surfaces A Physicochemical and Engineering AspectsVol. 704
Kunming University of Science and Technology (CN), Kunshan Govisionox Optoelectronic (China) (CN), Yuntianhua Group (China) (CN), Yunnan Investment Group (China) (CN)
National Natural Science Foundation of China, Analysis and Testing Foundation of Kunming University of Science and Technology, National College Students Innovation and Entrepreneurship Training Program
Affordable and clean energy
Openalex Percentile: Top 44%
Magnetic and transport properties of perovskites and related materials
0.47
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