Impact of Oxide Aperture on the Static and Dynamic Performance of 850-nm VCSELs

We fabricate 850-nm vertical-cavity surface-emitting lasers (VCSELs) with oxide-aperture diameters of 5, 7, 9 and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$11~\mu $ </tex-math></inline-formula>m and study the effect of oxide-aperture size on the threshold current, output power, differential quantum efficiency and wall-plug efficiency of the devices. We characterize the small-signal modulation bandwidth (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f} _{3dB}$ </tex-math></inline-formula>) of the devices and explore the impact of oxide-aperture size and bias current on the modulation bandwidth. We analyze the relationship between electrical power and the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f} _{3dB}$ </tex-math></inline-formula> of the VCSELs with different aperture diameters. The fabricated 850-nm VCSEL with the oxide-aperture diameter of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$7~\mu $ </tex-math></inline-formula>m at room temperature shows a maximum <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f} _{3dB}$ </tex-math></inline-formula> of nearly 20 GHz and an output power of 9.09 mW. When the oxide-aperture increases to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$11~\mu $ </tex-math></inline-formula>m, the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f} _{3dB}$ </tex-math></inline-formula> remains above 17 GHz and the optical output power exceeds 14 mW.

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Publication Details

Journal
IEEE Photonics Technology Letters
Published
2024-10-16
DOI
https://doi.org/10.1109/lpt.2024.3481471
Citations
2
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
Field-Weighted Citation Impact
0.42

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article

Impact of Oxide Aperture on the Static and Dynamic Performance of 850-nm VCSELs

Qiang Kan, Huan Zhang, Pingping Qiu, Yiyang Xie et al.
2 citations
IEEE Photonics Technology Letters
Semiconductor Lasers and Optical Devices
0.42
article

Impact of Oxide Aperture on the Static and Dynamic Performance of 850-nm VCSELs

Qiang Kan, Huan Zhang, Pingping Qiu, Yiyang Xie, Shanshan Du, Jun Deng, HengJie Zhou, JinBao Su
article en
2 citations

Abstract

We fabricate 850-nm vertical-cavity surface-emitting lasers (VCSELs) with oxide-aperture diameters of 5, 7, 9 and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$11~\mu $ </tex-math></inline-formula>m and study the effect of oxide-aperture size on the threshold current, output power, differential quantum efficiency and wall-plug efficiency of the devices. We characterize the small-signal modulation bandwidth (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f} _{3dB}$ </tex-math></inline-formula>) of the devices and explore the impact of oxide-aperture size and bias current on the modulation bandwidth. We analyze the relationship between electrical power and the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f} _{3dB}$ </tex-math></inline-formula> of the VCSELs with different aperture diameters. The fabricated 850-nm VCSEL with the oxide-aperture diameter of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$7~\mu $ </tex-math></inline-formula>m at room temperature shows a maximum <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f} _{3dB}$ </tex-math></inline-formula> of nearly 20 GHz and an output power of 9.09 mW. When the oxide-aperture increases to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$11~\mu $ </tex-math></inline-formula>m, the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f} _{3dB}$ </tex-math></inline-formula> remains above 17 GHz and the optical output power exceeds 14 mW.

IEEE Photonics Technology LettersVol. 36(24)
Chinese Academy of Sciences (CN), Beijing University of Technology (CN), Institute of Semiconductors (CN)
National Natural Science Foundation of China, Beijing Nova Program, National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 37%
Semiconductor Lasers and Optical Devices
0.42
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