Impact of Oxide Aperture on the Static and Dynamic Performance of 850-nm VCSELs
We fabricate 850-nm vertical-cavity surface-emitting lasers (VCSELs) with oxide-aperture diameters of 5, 7, 9 and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$11~\mu $ </tex-math></inline-formula>m and study the effect of oxide-aperture size on the threshold current, output power, differential quantum efficiency and wall-plug efficiency of the devices. We characterize the small-signal modulation bandwidth (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f} _{3dB}$ </tex-math></inline-formula>) of the devices and explore the impact of oxide-aperture size and bias current on the modulation bandwidth. We analyze the relationship between electrical power and the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f} _{3dB}$ </tex-math></inline-formula> of the VCSELs with different aperture diameters. The fabricated 850-nm VCSEL with the oxide-aperture diameter of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$7~\mu $ </tex-math></inline-formula>m at room temperature shows a maximum <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f} _{3dB}$ </tex-math></inline-formula> of nearly 20 GHz and an output power of 9.09 mW. When the oxide-aperture increases to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$11~\mu $ </tex-math></inline-formula>m, the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${f} _{3dB}$ </tex-math></inline-formula> remains above 17 GHz and the optical output power exceeds 14 mW.
Authors
- Qiang Kan (ORCID: https://orcid.org/0000-0002-2683-1967)
- Huan Zhang (ORCID: https://orcid.org/0000-0001-8625-8050)
- Pingping Qiu (ORCID: https://orcid.org/0000-0001-8805-6882)
- Yiyang Xie (ORCID: https://orcid.org/0000-0001-8563-2004)
- Shanshan Du (ORCID: https://orcid.org/0000-0002-0485-9029)
- Jun Deng (ORCID: https://orcid.org/0000-0002-9022-9647)
- HengJie Zhou
- JinBao Su (ORCID: https://orcid.org/0009-0007-7382-4050)
Institutions
- Chinese Academy of Sciences (CN)
- Beijing University of Technology (CN)
- Institute of Semiconductors (CN)
Publication Details
- Journal
- IEEE Photonics Technology Letters
- Published
- 2024-10-16
- DOI
- https://doi.org/10.1109/lpt.2024.3481471
- Citations
- 2
- Primary Topic
- Semiconductor Lasers and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.42
Funders
- National Natural Science Foundation of China
- Beijing Nova Program
- National Key Research and Development Program of China