GaAs PIN Diode Based 220 GHz Switch Design Using Flip Chip Technique

GaAs PIN diode based single-pole single-throw (SPST) and single-pole double-throw (SPDT) switches with low insertion loss have been designed and fabricated up to 220 GHz. The <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small>-state and <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</small>-state small-signal models of GaAs PIN diodes have been developed, and the parameter extraction procedure is explained in more detail. GaAs PIN diodes have been mounted on the quartz substrate using the flip chip technique to achieve integrated subterahertz switches. The developed SPST switch has 3.2 dB insertion loss and 29 dB isolation in the frequency range of 220 to 230 GHz. The measurement of the SPDT switch reveals an isolation of >20 dB and an insertion loss of <3.3 dB in the frequency range of 213 to 225 GHz. This switch boasts the highest operating frequency reported based on GaAs PIN diodes.