Small-Signal Characterization and Modelling of a Back Bias Reconfigurable Field Effect Transistor
In this work, we present the first small signal characterization of a reconfigurable field effect transistor. The device under test is a back-bias RFET integrated into an industrial 22nm FDSOI platform. These devices are particularly interesting for CMOS co-design as they enable a frequency doubling functionality using a single transistor, without the need for inductive elements. Extraction of figures of merit and a comprehensive small signal analysis are performed. It is demonstrated that an ambipolar back-bias reconfigurable field-effect transistor can be modelled using a conventional small-signal equivalent circuit. This shows promise for modelling engineers and circuit designers to explore innovative applications of this new emerging technology.
Authors
- Jens Trommer (ORCID: https://orcid.org/0000-0003-2972-438X)
- Thomas Mikolajick (ORCID: https://orcid.org/0000-0003-3814-0378)
- C. Mukherjee (ORCID: https://orcid.org/0000-0002-8206-2779)
- Maximilian Drescher
- V. Sessi (ORCID: https://orcid.org/0000-0001-5312-2827)
- Bruno Neckel Wesling
- Talha Chohan (ORCID: https://orcid.org/0000-0003-4350-2185)
- Stefan Slesazeck (ORCID: https://orcid.org/0000-0002-0414-0321)
- Marina Deng (ORCID: https://orcid.org/0000-0001-7964-1000)
- Cristell Maneux (ORCID: https://orcid.org/0000-0001-9125-5372)
- Steffen Lehmann (ORCID: https://orcid.org/0000-0003-0665-6716)
Institutions
- NaMLab (Germany) (DE)
- GlobalFoundries (Germany) (DE)
- Laboratoire de l'Intégration du Matériau au Système (FR)
- Institut Polytechnique de Bordeaux (FR)
- Technische Universität Dresden (DE)
Publication Details
- Published
- 2024-09-09
- DOI
- https://doi.org/10.1109/esserc62670.2024.10719561
- Citations
- 2
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.42
Funders
- European Commission
- Freistaat Sachsen
- Horizon 2020 Framework Programme