Influence of Dimensional Quantization Effects on the Effective Mass of Major Charge Carriers in LED Heterostructures with InxGa1−xN/GaN Multiple Quantum Wells

By numerically solving the self-consistent system of the Schr¨odinger equations and Poisson electroneutrality, zone diagrams of LED heterostructures with InxGa1−xN/GaN multiple quantum wells have been calculated. The effect of electron–phonon interaction, nonparabolicity of the dispersion relation, and hybridization of the wave function on the values of the effective mass of major charge carriers in the InxGa1−xN/GaN quantum wells has been studied. The long-wave shift of 2D-plasmon resonances is associated with the temperature renormalization of the effective mass of two-dimensional carriers. To describe the temperature dependence of the effective mass, the function for the displacement of the 2D-plasmon resonance frequency is introduced.

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Publication Details

Journal
Vestnik Moskovskogo Universiteta Seriya 3 Fizika Astronomiya
Published
2024-10-14
DOI
https://doi.org/10.55959/msu0579-9392.79.2440401
Primary Topic
GaN-based semiconductor devices and materials
Type
article
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article

Influence of Dimensional Quantization Effects on the Effective Mass of Major Charge Carriers in LED Heterostructures with InxGa1−xN/GaN Multiple Quantum Wells

L. P. Avakyants, E. R. Burmistrov
Vestnik Moskovskogo Universiteta Seriya 3 Fizika Astronomiya
GaN-based semiconductor devices and materials
article

Influence of Dimensional Quantization Effects on the Effective Mass of Major Charge Carriers in LED Heterostructures with InxGa1−xN/GaN Multiple Quantum Wells

L. P. Avakyants, E. R. Burmistrov
article en

Abstract

By numerically solving the self-consistent system of the Schr¨odinger equations and Poisson electroneutrality, zone diagrams of LED heterostructures with InxGa1−xN/GaN multiple quantum wells have been calculated. The effect of electron–phonon interaction, nonparabolicity of the dispersion relation, and hybridization of the wave function on the values of the effective mass of major charge carriers in the InxGa1−xN/GaN quantum wells has been studied. The long-wave shift of 2D-plasmon resonances is associated with the temperature renormalization of the effective mass of two-dimensional carriers. To describe the temperature dependence of the effective mass, the function for the displacement of the 2D-plasmon resonance frequency is introduced.

Vestnik Moskovskogo Universiteta Seriya 3 Fizika Astronomiya(№4_2024)
Lomonosov Moscow State University (RU), Moscow State University (TJ)
Openalex Percentile: Top 89%
GaN-based semiconductor devices and materials
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